SIA430DJT-T4-GE3

Mfr. #:: SIA430DJT-T4-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 20V Vds 20V Vgs PowerPAK SC-70
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIA430DJT-T4-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: SC-70-6

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 12 A

Rds On - Drain-Source-Widerstand:: 13.5 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 18 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 19.2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET, PowerPAK

Verpackung:: Spule

Serie:: SIA

Transistortyp:: 1 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 16 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 10 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 15 ns

Typische Einschaltverzögerungszeit:: 16 ns

Tags: SIA430, SIA43, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIA430DJT-T4-GE3 DISTI # SIA430DJT-T4-GE3-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 6000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$0.1781
SIA430DJT-T4-GE3 DISTI # SIA430DJT-T4-GE3	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA430DJT-T4-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.1499 30000:$0.1539 18000:$0.1579 12000:$0.1649 6000:$0.1699
SIA430DJT-T4-GE3 DISTI # 59AC7304	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET	0	50000:$0.1510 30000:$0.1580 20000:$0.1700 10000:$0.1820 5000:$0.1970 1:$0.2020
SIA430DJT-T4-GE3 DISTI # 78-SIA430DJT-T4-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	0	3000:$0.1690 6000:$0.1690 12000:$0.1570 24000:$0.1490

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIA430DJT-T1-GE3 OMO.#: OMO-SIA430DJT-T1-GE3	MOSFET 20V Vds 20V Vgs Thin PowerPAK SC-70
	Mfr.#: SIA430DJT-T4-GE3 OMO.#: OMO-SIA430DJT-T4-GE3	MOSFET 20V Vds 20V Vgs PowerPAK SC-70
	Mfr.#: SIA430DJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA430DJ-T1-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SIA430DJ OMO.#: OMO-SIA430DJ-1190	Neu und Original
	Mfr.#: SIA430DJ-T1-GE3 OMO.#: OMO-SIA430DJ-T1-GE3-VISHAY	MOSFET N-CH 20V 12A SC70-6
	Mfr.#: SIA430DJ-T1-GE3-CUTTAPE OMO.#: OMO-SIA430DJ-T1-GE3-CUTTAPE-1190	Neu und Original
	Mfr.#: SIA430DJ-T4-GE3 OMO.#: OMO-SIA430DJ-T4-GE3-VISHAY	MOSFET N-CH 20V SC-70-6
	Mfr.#: SIA430DJT-T1-GE3 OMO.#: OMO-SIA430DJT-T1-GE3-VISHAY	MOSFET N-CH 20V 12A SC70-6
	Mfr.#: SIA430DJT-T4-GE3 OMO.#: OMO-SIA430DJT-T4-GE3-VISHAY	MOSFET N-CH 20V 12A SC-70-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von SIA430DJT-T4-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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SIA430DJT-T4-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes