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IXFN320N17T2

IXFN320N17T2
Mfr. #:
IXFN320N17T2
Hersteller:
Littelfuse
Beschreibung:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN320N17T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN320N17T2 DatasheetIXFN320N17T2 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFN320N17T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
170 V
Id - Kontinuierlicher Drainstrom:
260 A
Rds On - Drain-Source-Widerstand:
5.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
640 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
1.07 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFN320N17
Transistortyp:
1 N-Channel
Typ:
GigaMOS Trench T2 HiperFet
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
120 S
Abfallzeit:
230 ns
Produktart:
MOSFET
Anstiegszeit:
170 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
115 ns
Typische Einschaltverzögerungszeit:
46 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Teil # Mfg. Beschreibung Aktie Preis
IXFN320N17T2
DISTI # V99:2348_15877085		IXYS CorporationTrans MOSFET N-CH 170V 260A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$24.1400
  • 5000:$24.1500
  • 1000:$27.3500
  • 100:$35.5200
  • 10:$37.0600
IXFN320N17T2
DISTI # IXFN320N17T2-ND		IXYS CorporationMOSFET N-CH 170V 260A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$34.2810
IXFN320N17T2
DISTI # 747-IXFN320N17T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		24
  • 1:$37.0600
  • 5:$35.2100
  • 10:$34.2800
  • 25:$31.5000
  • 50:$30.1600
  • 100:$29.2800
  • 200:$26.8700
IXFN320N17T2
DISTI # IXFN320N17T2		IXYS CorporationN-Ch 170V 260A 1070W 0,0052R SOT227B
RoHS: Compliant		9
  • 1:€30.0000
  • 5:€26.0000
  • 10:€24.0000
  • 25:€23.1000
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 Neu und Original
Verfügbarkeit
Aktie:
24
Auf Bestellung:
2007
Menge eingeben:
Der aktuelle Preis von IXFN320N17T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
37,06 $
37,06 $
5
35,21 $
176,05 $
10
34,28 $
342,80 $
25
31,50 $
787,50 $
50
30,16 $
1 508,00 $
100
29,28 $
2 928,00 $
200
26,87 $
5 374,00 $
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