IXYN100N120B3H1

IXYN100N120B3H1
Mfr. #:
IXYN100N120B3H1
Hersteller:
Littelfuse
Beschreibung:
IGBT XPT 1200V 152A SOT-227B
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYN100N120B3H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Module
Serie
GenX3, XPT
Verpackung
Rohr
Handelsname
XPT GenX3
Paket-Koffer
SOT-227-4, miniBLOC
Befestigungsart
Chassishalterung
Lieferanten-Geräte-Paket
SOT-227B
Eingang
Standard
Aufbau
Single
Leistung max
690W
Strom-Kollektor-Ic-Max
165A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
Strom-Kollektor-Abschalt-Max
50μA
IGBT-Typ
PT
Vce-on-Max-Vge-Ic
2.6V @ 15V, 100A
Eingangskapazität-Cies-Vce
6nF @ 25V
NTC-Thermistor
Nein
Tags
IXYN100N1, IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B
***i-Key
IGBT XPT 1200V 152A SOT-227B
***ark
Igbt, N-Ch, 1.2Kv, 165A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:165A; Collector Emitter Saturation Voltage Vce(On):2.6V; Power Dissipation Pd:690W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, N-CH, 1.2KV, 165A, SOT-227B; Transistor Polarity:N Channel; DC Collector Current:165A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:690W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:XPT GenX3 Series; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, CA-N, 1,2KV, 165A, SOT-227B; Polarità Transistor:Canale N; Corrente di Collettore CC:165A; Tensione Saturaz Collettore-Emettitore Vce(on):2.6V; Dissipazione di Potenza Pd:690W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:SOT-227B; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:XPT GenX3 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Teil # Mfg. Beschreibung Aktie Preis
IXYN100N120B3H1
DISTI # V36:1790_15877681
IXYS Corporation1200V XPTTM IGBTGenX3TM w/ Diode
RoHS: Compliant
0
  • 10000:$17.8000
  • 5000:$17.8100
  • 1000:$19.2900
  • 100:$22.7000
  • 10:$23.3200
IXYN100N120B3H1
DISTI # IXYN100N120B3H1-ND
IXYS CorporationIGBT XPT 1200V 152A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$29.6810
IXYN100N120B3H1
DISTI # 747-IXYN100N120B3H1
IXYS CorporationIGBT Transistors
RoHS: Compliant
26
  • 1:$30.5600
  • 5:$29.0300
  • 10:$28.2700
  • 25:$25.9800
  • 50:$25.3500
  • 100:$24.1400
  • 200:$22.1600
IXYN100N120B3H1
DISTI # 8047606
IXYS CorporationIGBT 1200V 76A XPT GENX3 W/DIODE SOT227B, EA15
  • 30:£17.9800
  • 10:£18.3500
  • 5:£19.0100
  • 2:£19.9000
  • 1:£22.1100
IXYN100N120B3H1
DISTI # 2674800
IXYS CorporationIGBT, N-CH, 1.2KV, 165A, SOT-227B
RoHS: Compliant
0
  • 500:$34.2200
  • 250:$35.2800
  • 100:$36.5400
  • 10:$38.6100
  • 1:$39.3500
IXYN100N120B3H1
DISTI # 2674800
IXYS CorporationIGBT, N-CH, 1.2KV, 165A, SOT-227B
RoHS: Compliant
0
  • 100:£16.9100
  • 50:£19.3400
  • 10:£19.8200
  • 5:£22.1500
  • 1:£23.3200
Bild Teil # Beschreibung
IXYN100N65A3

Mfr.#: IXYN100N65A3

OMO.#: OMO-IXYN100N65A3

IGBT Transistors DISC IGBT XPT-GENX3 (MINI
IXYN100N120B3H1

Mfr.#: IXYN100N120B3H1

OMO.#: OMO-IXYN100N120B3H1

IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI(
IXYN100N120C3H1

Mfr.#: IXYN100N120C3H1

OMO.#: OMO-IXYN100N120C3H1

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXYN100N65C3H1

Mfr.#: IXYN100N65C3H1

OMO.#: OMO-IXYN100N65C3H1

IGBT Transistors 650V/166A XPT Copacked SOT-227B
IXYN100N120C3

Mfr.#: IXYN100N120C3

OMO.#: OMO-IXYN100N120C3

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXYN100N120B3H1

Mfr.#: IXYN100N120B3H1

OMO.#: OMO-IXYN100N120B3H1-IXYS-CORPORATION

IGBT XPT 1200V 152A SOT-227B
IXYN100N65A3

Mfr.#: IXYN100N65A3

OMO.#: OMO-IXYN100N65A3-IXYS-CORPORATION

IGBT XPT 650V 166A SOT-227B
IXYN100N65C3H1

Mfr.#: IXYN100N65C3H1

OMO.#: OMO-IXYN100N65C3H1-IXYS-CORPORATION

IGBT Transistors 650V/166A XPT Copacked SOT-227B
IXYN100N120C3H1

Mfr.#: IXYN100N120C3H1

OMO.#: OMO-IXYN100N120C3H1-IXYS-CORPORATION

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXYN100N120C3

Mfr.#: IXYN100N120C3

OMO.#: OMO-IXYN100N120C3-IXYS-CORPORATION

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXYN100N120B3H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
26,70 $
26,70 $
10
25,36 $
253,65 $
100
24,03 $
2 403,00 $
500
22,70 $
11 347,50 $
1000
21,36 $
21 360,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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