IXYN100N65C3H1

IXYN100N65C3H1
Mfr. #:
IXYN100N65C3H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/166A XPT Copacked SOT-227B
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYN100N65C3H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXYN100N65C3H1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Module
Serie
GenX3, XPT
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
SMD/SMT
Handelsname
XPT
Paket-Koffer
SOT-227-4, miniBLOC
Befestigungsart
Chassis, Bolzenmontage
Lieferanten-Geräte-Paket
SOT-227B
Eingang
Standard
Aufbau
Single
Leistung max
600W
Strom-Kollektor-Ic-Max
166A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
Strom-Kollektor-Abschalt-Max
50μA
IGBT-Typ
PT
Vce-on-Max-Vge-Ic
2.3V @ 15V, 70A
Eingangskapazität-Cies-Vce
4.98nF @ 25V
NTC-Thermistor
Nein
Pd-Verlustleistung
600 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.85 V
Kontinuierlicher Kollektorstrom-bei-25-C
166 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
30 V
Kontinuierlicher Kollektor-Strom-Ic-Max
166 A
Tags
IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IGBT Transistors 650V/166A XPT Copacked SOT-227B
***i-Key
IGBT MOD 650V 166A 600W SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXYN100N65C3H1
DISTI # IXYN100N65C3H1-ND
IXYS CorporationIGBT XPT 650V 166A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
1793In Stock
  • 250:$18.2700
  • 100:$19.9080
  • 30:$21.4200
  • 10:$23.3100
  • 1:$25.2000
IXYN100N65C3H1
DISTI # 747-IXYN100N65C3H1
IXYS CorporationIGBT Transistors 650V/166A XPT Copacked SOT-227B
RoHS: Compliant
420
  • 1:$24.0000
  • 5:$22.8000
  • 10:$22.2000
  • 25:$20.4000
  • 50:$19.9100
  • 100:$18.9600
  • 200:$17.4000
Bild Teil # Beschreibung
IXYN100N65A3

Mfr.#: IXYN100N65A3

OMO.#: OMO-IXYN100N65A3

IGBT Transistors DISC IGBT XPT-GENX3 (MINI
IXYN100N120B3H1

Mfr.#: IXYN100N120B3H1

OMO.#: OMO-IXYN100N120B3H1

IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI(
IXYN100N120C3H1

Mfr.#: IXYN100N120C3H1

OMO.#: OMO-IXYN100N120C3H1

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXYN100N65C3H1

Mfr.#: IXYN100N65C3H1

OMO.#: OMO-IXYN100N65C3H1

IGBT Transistors 650V/166A XPT Copacked SOT-227B
IXYN100N120C3

Mfr.#: IXYN100N120C3

OMO.#: OMO-IXYN100N120C3

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXYN100N120B3H1

Mfr.#: IXYN100N120B3H1

OMO.#: OMO-IXYN100N120B3H1-IXYS-CORPORATION

IGBT XPT 1200V 152A SOT-227B
IXYN100N65A3

Mfr.#: IXYN100N65A3

OMO.#: OMO-IXYN100N65A3-IXYS-CORPORATION

IGBT XPT 650V 166A SOT-227B
IXYN100N65C3H1

Mfr.#: IXYN100N65C3H1

OMO.#: OMO-IXYN100N65C3H1-IXYS-CORPORATION

IGBT Transistors 650V/166A XPT Copacked SOT-227B
IXYN100N120C3H1

Mfr.#: IXYN100N120C3H1

OMO.#: OMO-IXYN100N120C3H1-IXYS-CORPORATION

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXYN100N120C3

Mfr.#: IXYN100N120C3

OMO.#: OMO-IXYN100N120C3-IXYS-CORPORATION

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von IXYN100N65C3H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
26,10 $
26,10 $
10
24,80 $
247,95 $
100
23,49 $
2 349,00 $
500
22,18 $
11 092,50 $
1000
20,88 $
20 880,00 $
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