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IPD60R750E6ATMA1

IPD60R750E6ATMA1
Mfr. #:
IPD60R750E6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R750E6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPD60R750E6 SP001117728
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Vds-Drain-Source-Breakdown-Voltage
600 V
Transistor-Polarität
N-Kanal
Tags
IPD60R7, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPD60R750E6ATMA1
DISTI # V72:2272_06384542		Infineon Technologies AGTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		294
  • 75000:$0.5069
  • 30000:$0.5118
  • 15000:$0.5167
  • 6000:$0.5215
  • 3000:$0.5264
  • 1000:$0.5294
  • 500:$0.6727
  • 250:$0.7503
  • 100:$0.7808
  • 50:$0.9464
  • 25:$0.9960
  • 10:$1.0511
  • 1:$1.3558
IPD60R750E6ATMA1
DISTI # IPD60R750E6ATMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 5.7A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R750E6ATMA1
    DISTI # 26195490    		Infineon Technologies AGTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		294
    • 15000:$0.5487
    • 6000:$0.5573
    • 3000:$0.5659
    • 1000:$0.5691
    • 500:$0.7232
    • 250:$0.8066
    • 100:$0.8394
    • 50:$1.0174
    • 25:$1.0707
    • 13:$1.1299
    IPD60R750E6ATMA1
    DISTI # 22AC4485    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1607
    • 1000:$0.5730
    • 500:$0.7250
    • 250:$0.7730
    • 100:$0.8210
    • 50:$0.9040
    • 25:$0.9870
    • 10:$1.0700
    • 1:$1.2500
    IPD60R750E6ATMA1
    DISTI # 726-IPD60R750E6ATMA1    		Infineon Technologies AGMOSFET N-Ch 650V 5.7A DPAK-2
    RoHS: Compliant    		903
    • 1:$1.2400
    • 10:$1.0600
    • 100:$0.8130
    • 500:$0.7180
    • 1000:$0.5670
    • 2500:$0.5030
    • 10000:$0.4840
    IPD60R750E6ATMA1
    DISTI # 2764859    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-252
    RoHS: Compliant    		1607
    • 100:$1.1700
    • 25:$1.4300
    • 5:$1.6400
    IPD60R750E6ATMA1
    DISTI # 2764859    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-2521840
    • 500:£0.5640
    • 250:£0.6020
    • 100:£0.6390
    • 25:£0.8330
    • 5:£0.9250
    Bild Teil # Beschreibung
    IPD60R750E6 6R750E6

    Mfr.#: IPD60R750E6 6R750E6

    OMO.#: OMO-IPD60R750E6-6R750E6-1190

    		 Neu und Original
    IPD60R750E6BTMA1

    Mfr.#: IPD60R750E6BTMA1

    OMO.#: OMO-IPD60R750E6BTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 5.7A TO252
    IPD60R750E6

    Mfr.#: IPD60R750E6

    OMO.#: OMO-IPD60R750E6-126

    		 IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6
    IPD60R750E6ATMA1

    Mfr.#: IPD60R750E6ATMA1

    OMO.#: OMO-IPD60R750E6ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IPD60R750E6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,73 $
    0,73 $
    10
    0,69 $
    6,90 $
    100
    0,65 $
    65,34 $
    500
    0,62 $
    308,55 $
    1000
    0,58 $
    580,80 $
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