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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI8461DB-T2-E1 DISTI # V72:2272_09216563 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R RoHS: Compliant | 788 |
|
| SI8461DB-T2-E1 DISTI # 25790142 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R RoHS: Compliant | 788 |
|
| SI8461DB-T2-E1. DISTI # 15AC0305 | Vishay Intertechnologies | Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:780mW,No. of Pins:4Pins , RoHS Compliant: No | 0 | |
| SI8461DB-T2-E1 DISTI # 35R6249 | Vishay Intertechnologies | P CHANNEL MOSFET, -20V, 3.7A,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Product Range:- , RoHS Compliant: Yes | 0 | |
| SI8461DB-T2-E1 DISTI # 35R0088 | Vishay Intertechnologies | MOSFET, P-CH, -20V, -3.7A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes | 0 | |
| SI8461DB-T2-E1 DISTI # 70617007 | Vishay Siliconix | SI8461DB-T2-E1 P-channel MOSFET Transistor,3 A,20 V,4-Pin MICRO FOOT RoHS: Compliant | 0 |
|
| SI8461DB-T2-E1 | Vishay Siliconix | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3033 |
|
| SI8461DB-T2-E1 | Vishay Intertechnologies | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2400 |
|
| SI8461DBT2E1 | Vishay Intertechnologies | RoHS: Compliant | Europe - 3000 | |
| SI8461DB-T2-E1 | Vishay Intertechnologies | INSTOCK | 1140 | |
| SI8461DB-T2-E1 DISTI # 1781671 | Vishay Intertechnologies | P CHANNEL MOSFET, -20V, 3.7A RoHS: Compliant | 0 |
|
| SI8461DB-T2-E1 DISTI # 1781671 | Vishay Intertechnologies | P CHANNEL MOSFET, -20V, 3.7A RoHS: Compliant | 0 |
|
| SI8461DB-T2-E1 DISTI # C1S803601645333 | Vishay Intertechnologies | MOSFETs RoHS: Compliant | 788 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI8461DB-T2-E1. OMO.#: OMO-SI8461DB-T2-E1--1190 |
Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D |
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Mfr.#: SI8461DB OMO.#: OMO-SI8461DB-1190 |
Neu und Original |
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Mfr.#: SI8461DB-T2-E1 OMO.#: OMO-SI8461DB-T2-E1-VISHAY |
MOSFET P-CH 20V MICROFOOT |