 | |  | |
| PartNumber | SI8461DB-T2-E1. | SI8461DB | SI8461DB-T2-E1 |
| Description | Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D | MOSFET P-CH 20V MICROFOOT | |
| Manufacturer | - | Vishay Siliconix | Vishay Siliconix |
| Product Category | - | FETs - Single | FETs - Single |
| Series | - | TrenchFETR | TrenchFETR |
| Packaging | - | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | 4-XFBGA, CSPBGA | 4-XFBGA, CSPBGA |
| Technology | - | Si | Si |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Number of Channels | - | 1 Channel | 1 Channel |
| Supplier Device Package | - | 4-Microfoot | 4-Microfoot |
| Configuration | - | Single | Single |
| FET Type | - | MOSFET P-Channel, Metal Oxide | MOSFET P-Channel, Metal Oxide |
| Power Max | - | 780mW | 780mW |
| Transistor Type | - | 1 P-Channel | 1 P-Channel |
| Drain to Source Voltage Vdss | - | 20V | 20V |
| Input Capacitance Ciss Vds | - | 610pF @ 10V | 610pF @ 10V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | 100 mOhm @ 1.5A, 4.5V | 100 mOhm @ 1.5A, 4.5V |
| Vgs th Max Id | - | 1V @ 250μA | 1V @ 250μA |
| Gate Charge Qg Vgs | - | 24nC @ 8V | 24nC @ 8V |
| Pd Power Dissipation | - | 1.8 W | 1.8 W |
| Maximum Operating Temperature | - | + 85 C | + 85 C |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Fall Time | - | 10 ns | 10 ns |
| Rise Time | - | 25 ns | 25 ns |
| Vgs Gate Source Voltage | - | 8 V | 8 V |
| Id Continuous Drain Current | - | - 3.7 A | - 3.7 A |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - 20 V |
| Rds On Drain Source Resistance | - | 136 mOhms | 136 mOhms |
| Transistor Polarity | - | P-Channel | P-Channel |
| Typical Turn Off Delay Time | - | 35 ns | 35 ns |
| Typical Turn On Delay Time | - | 15 ns | 15 ns |
| Qg Gate Charge | - | 9.5 nC | 9.5 nC |
| Forward Transconductance Min | - | 7 S | 7 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SI8461DB-T2-E1. | Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D | ||
| SI8461DB | Neu und Original | ||
Vishay |
SI8461DB-T2-E1 | MOSFET P-CH 20V MICROFOOT |