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SI8461DB-T2-E1

SI8461DB-T2-E1
Mfr. #:
SI8461DB-T2-E1
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 20V MICROFOOT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8461DB-T2-E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8461DB-T2-E1 DatasheetSI8461DB-T2-E1 Datasheet (P4-P6)SI8461DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
4-XFBGA, CSPBGA
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
4-Microfoot
Aufbau
Single
FET-Typ
MOSFET P-Kanal, Metalloxid
Leistung max
780mW
Transistor-Typ
1 P-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
610pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
100 mOhm @ 1.5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
24nC @ 8V
Pd-Verlustleistung
1.8 W
Maximale-Betriebstemperatur
+ 85 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
10 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
- 3.7 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Widerstand
136 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
35 ns
Typische-Einschaltverzögerungszeit
15 ns
Qg-Gate-Ladung
9.5 nC
Vorwärts-Transkonduktanz-Min
7 S
Tags
SI8461D, SI8461, SI846, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SI8461DB-T2-E1
DISTI # V72:2272_09216563		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R
RoHS: Compliant		788
  • 75000:$0.2259
  • 30000:$0.2265
  • 15000:$0.2290
  • 6000:$0.2329
  • 3000:$0.2344
  • 1000:$0.2451
  • 500:$0.2655
  • 250:$0.3049
  • 100:$0.3317
  • 50:$0.3570
  • 25:$0.4267
  • 10:$0.4364
  • 1:$0.5067
SI8461DB-T2-E1
DISTI # SI8461DB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2392
SI8461DB-T2-E1
DISTI # SI8461DB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI8461DB-T2-E1
    DISTI # SI8461DB-T2-E1DKR-ND    		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI8461DB-T2-E1
      DISTI # 25790142      		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R
      RoHS: Compliant      		788
      • 500:$0.2655
      • 250:$0.3049
      • 100:$0.3317
      • 50:$0.3570
      • 34:$0.4267
      SI8461DB-T2-E1
      DISTI # 35R6249      		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Product Range:- , RoHS Compliant: Yes0
        SI8461DB-T2-E1
        DISTI # 35R0088        		Vishay IntertechnologiesMOSFET, P-CH, -20V, -3.7A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes0
          SI8461DB-T2-E1.
          DISTI # 15AC0305          		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:780mW,No. of Pins:4Pins , RoHS Compliant: No0
            SI8461DB-T2-E1
            DISTI # 70617007            		Vishay SiliconixSI8461DB-T2-E1 P-channel MOSFET Transistor,3 A,20 V,4-Pin MICRO FOOT
            RoHS: Compliant            		0
            • 300:$0.4500
            • 600:$0.4000
            • 1500:$0.3500
            • 3000:$0.3200
            SI8461DB-T2-E1
            DISTI # 781-SI8461DB-E1            		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs MICRO FOOT 1 x 1
            RoHS: Compliant            		1314
            • 1:$0.6000
            • 10:$0.4790
            • 100:$0.3640
            • 500:$0.3000
            • 1000:$0.2510
            • 3000:$0.2500
            SI8461DB-T2-E1Vishay Siliconix2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET3033
            • 1100:$0.1625
            • 232:$0.1820
            • 1:$0.5200
            SI8461DB-T2-E1Vishay Intertechnologies2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET2400
            • 2223:$0.3150
            • 445:$0.3600
            • 1:$0.9000
            SI8461DBT2E1Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 3000
              SI8461DB-T2-E1Vishay IntertechnologiesINSTOCK1140
                SI8461DB-T2-E1
                DISTI # C1S803601645333                		Vishay IntertechnologiesMOSFETs
                RoHS: Compliant                		788
                • 100:$0.3340
                • 50:$0.3610
                • 25:$0.4286
                • 10:$0.4384
                SI8461DB-T2-E1
                DISTI # 1781671                		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A
                RoHS: Compliant                		0
                • 20:$0.8620
                • 100:$0.7140
                • 500:$0.5590
                • 1000:$0.4600
                • 2500:$0.3910
                • 5000:$0.3700
                SI8461DB-T2-E1
                DISTI # 1781671                		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A
                RoHS: Compliant                		0
                • 3000:£0.2230
                Bild Teil # Beschreibung
                SI8461DB-T2-E1.

                Mfr.#: SI8461DB-T2-E1.

                OMO.#: OMO-SI8461DB-T2-E1--1190

                		 Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D
                SI8461DB

                Mfr.#: SI8461DB

                OMO.#: OMO-SI8461DB-1190

                		 Neu und Original
                SI8461DB-T2-E1

                Mfr.#: SI8461DB-T2-E1

                OMO.#: OMO-SI8461DB-T2-E1-VISHAY

                		 MOSFET P-CH 20V MICROFOOT
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                1500
                Menge eingeben:
                Der aktuelle Preis von SI8461DB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                0,24 $
                0,24 $
                10
                0,23 $
                2,32 $
                100
                0,22 $
                21,94 $
                500
                0,21 $
                103,60 $
                1000
                0,20 $
                195,00 $
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