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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 3988In Stock |
|
| BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 3988In Stock |
|
| BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC12DN20NS3 G DISTI # SP000781774 | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP (Alt: SP000781774) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSC12DN20NS3GXT DISTI # BSC12DN20NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC12DN20NS3GATMA1 DISTI # 50Y1813 | Infineon Technologies AG | MOSFET Transistor, N Channel, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V RoHS Compliant: Yes | 0 |
|
| BSC12DN20NS3GATMA1 | Infineon Technologies AG | Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant | 5000Reel |
|
| BSC12DN20NS3 G DISTI # 726-BSC12DN20NS3GATM | Infineon Technologies AG | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant | 3326 |
|
| BSC12DN20NS3G DISTI # 726-BSC12DN20NS3G | Infineon Technologies AG | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant | 8945 |
|
| BSC12DN20NS3GATMA1 DISTI # 1702290 | Infineon Technologies AG | MOSFET N-CH 200V 11A 125M OPTIMOS3 TDSON, RL | 4960 |
|
| BSC12DN20NS3GATMA1 DISTI # 2480747RL | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC12DN20NS3GATMA1 DISTI # 2480747 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC12DN20NS3GATMA1 DISTI # 2480747 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant | 485 |
|
| BSC12DN20NS3GATMA1 DISTI # XSFP00000114613 | Infineon Technologies AG | RoHS: Compliant | 15000 in Stock0 on Order |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC12DN20NS3 G OMO.#: OMO-BSC12DN20NS3-G |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC12DN20NS3G OMO.#: OMO-BSC12DN20NS3G |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC12DN20NS3 G OMO.#: OMO-BSC12DN20NS3-G-1190 |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC12DN20NS3GXT OMO.#: OMO-BSC12DN20NS3GXT-1190 |
Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) |
|
Mfr.#: BSC12DN20NS3GATMA1 |
MOSFET N-CH 200V 11.3A 8TDSON |
|
|
Mfr.#: BSC12DN20NS3G OMO.#: OMO-BSC12DN20NS3G-317 |
RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
