BSC12DN20NS3GATMA1

Mfr. #:: BSC12DN20NS3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 200V 11.3A 8TDSON
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC12DN20NS3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BSC12DN20NS3GATMA1 Datasheet BSC12DN20NS3GATMA1 Datasheet (P4-P6)BSC12DN20NS3GATMA1 Datasheet (P7-P9)
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Produkteigenschaft
Attributwert

Tags: BSC12D, BSC12, BSC1, BSC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.

Email: [email protected]

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BSC12DN20NS3GATMA1 Beschreibung

***ure Electronics: Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 200V, 11.3A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Source Voltage Vds:200V; On Resistance

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

***nell: MOSFET, N-CH, 200V, 11.3A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 50W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

***eco: IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

***roFlash: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N-CH, 200V, 9.3A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 82W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***et: Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

***nell: MOSFET, P CH, 30V, 11.4A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

***ure Electronics: Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3

***ment14 APAC: MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Source Voltage Vds:200V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.22ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Package/Case:3-D-PAK ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***p One Stop: Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R

***ment14 APAC: MOSFET, N-CH, 200V, 11.3A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Source Voltage Vds:200V; On Resistance

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

***nell: MOSFET, N-CH, 200V, 11.3A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 50W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***i-Key: MOSFET N-CH 200V 11A DPAK

***ser: MOSFETs 200V NCh PowerMOSFET UltraFET

***el Nordic: Contact for details

***et: Trans MOSFET P-CH -150V, -13A, 295mOHM, 3-Pin(2+Tab) DPAK, Tube

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -150V, 13A, 580 mOhm, 44 nC Qg, D-Pak

***fin: Transistor PNP Mos IRFR6215 INTERNATIONAL RECTIFIER Ampere=13 V=150 TO252/DPAK

***ure Electronics: Single P-Channel 150V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: -150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Source Voltage Vds:-150V; On Resistance

***roFlash: Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.295ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC12DN20NS3GATMA1 DISTI # V72:2272_06384558	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R RoHS: Compliant	0	3000:$0.5361 1000:$0.5419 500:$0.7407 250:$0.7685 100:$0.8539 25:$1.1031 10:$1.1659 1:$1.4593
BSC12DN20NS3GATMA1 DISTI # V36:1790_06384558	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP T/R RoHS: Compliant	0	5000000:$0.4147 2500000:$0.4150 500000:$0.4415 50000:$0.4892 5000:$0.4972
BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	10000:$0.4785 5000:$0.4971
BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5775 500:$0.7315 100:$0.8855 10:$1.1360 1:$1.2700
BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5775 500:$0.7315 100:$0.8855 10:$1.1360 1:$1.2700
BSC12DN20NS3GXT DISTI # BSC12DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4519 30000:$0.4599 20000:$0.4759 10000:$0.4939 5000:$0.5119
BSC12DN20NS3GATMA1 DISTI # 50Y1813	Infineon Technologies AG	MOSFET Transistor, N Channel, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V RoHS Compliant: Yes	96	1000:$0.6600 500:$0.8350 250:$0.9230 100:$1.0100 50:$1.1100 25:$1.2000 10:$1.3000 1:$1.4500
BSC12DN20NS3 G DISTI # 726-BSC12DN20NS3GATM	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$1.1600 10:$0.9970 100:$0.7660 500:$0.6770 1000:$0.5340 5000:$0.4740 10000:$0.4560
BSC12DN20NS3G DISTI # 726-BSC12DN20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$1.1600 10:$0.9970 100:$0.7660 500:$0.6770 1000:$0.5340 5000:$0.4740 10000:$0.4560
BSC12DN20NS3GATMA1 DISTI # 1702290	Infineon Technologies AG	MOSFET N-CH 200V 11A 125M OPTIMOS3 TDSON, RL	4940	10000:£0.4290 5000:£0.4580
BSC12DN20NS3GATMA1 DISTI # 2480747	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant	96	1000:$0.8050 500:$1.0200 100:$1.1500 10:$1.5000 1:$1.7500
BSC12DN20NS3GATMA1 DISTI # 2480747RL	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant	0	1000:$0.8050 500:$1.0200 100:$1.1500 10:$1.5000 1:$1.7500
BSC12DN20NS3GATMA1 DISTI # 2480747	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TDSON-8	96	500:£0.6040 250:£0.6920 100:£0.7790 10:£1.0400 1:£1.2600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC12DN20NS3 G OMO.#: OMO-BSC12DN20NS3-G	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSC12DN20NS3G OMO.#: OMO-BSC12DN20NS3G	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSC12DN20NS3 G OMO.#: OMO-BSC12DN20NS3-G-1190	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSC12DN20NS3GXT OMO.#: OMO-BSC12DN20NS3GXT-1190	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
	Mfr.#: BSC12DN20NS3GATMA1 OMO.#: OMO-BSC12DN20NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 11.3A 8TDSON
	Mfr.#: BSC12DN20NS3G OMO.#: OMO-BSC12DN20NS3G-317	RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von BSC12DN20NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,76 $~~; ~~0,76 $~~

10: ~~0,73 $~~; ~~7,27 $~~

100: ~~0,69 $~~; ~~68,85 $~~

500: ~~0,65 $~~; ~~325,15 $~~

1000: ~~0,61 $~~; ~~612,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC12DN20NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes