CSD16325Q5

CSD16325Q5
Mfr. #:
CSD16325Q5
Beschreibung:
Darlington Transistors MOSFET N-Channel NexFET Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD16325Q5 Datenblatt
Die Zustellung:
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ECAD Model:
Mehr Informationen:
CSD16325Q5 Mehr Informationen CSD16325Q5 Product Details
Produkteigenschaft
Attributwert
Hersteller
TI
Produktkategorie
FETs - Einzeln
Serie
CSD16325Q5
Verpackung
Spule
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
VSON-Clip-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3.1 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
16 ns
Vgs-Gate-Source-Spannung
10 V
ID-Dauer-Drain-Strom
33 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.1 V
Rds-On-Drain-Source-Widerstand
2.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
32 ns
Typische-Einschaltverzögerungszeit
10.5 ns
Qg-Gate-Ladung
18 nC
Vorwärts-Transkonduktanz-Min
159 S
Tags
CSD16325Q, CSD16325, CSD1632, CSD163, CSD16, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
25V, N ch NexFET MOSFET™, single SON5x6, 2.2mOhm 8-VSON-CLIP -55 to 150
***p One Stop Global
Trans MOSFET N-CH 25V 33A 8-Pin SON EP T/R
***Components
MOSFET N-Channel 25V 33A NexFET SON8EP
*** Source Electronics
MOSFET N-CH 25V 5X6 100A 8SON
***ment14 APAC
N CHANNEL MOSFET, 25V, 100A
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
***ponent Sense
SMT FET_CSD16325Q5
***nell
MOSFET, N CH, 25V, 100A, 8SON; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:100A; Napięcie drenu / źródła Vds:25V; Rezystancja przewodzenia Rds(on):0.0017ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:1.1V; Straty mocy Pd:3.1W; Rodzaj obudowy tranzystora:SON; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:100A; Napięcie Vds, typ.:25V; Napięcie Vgs pomiaru Rds on:8V; Napięcie Vgs, maks.:10V; Numer podstawy:16325; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
NexFET™ Power MOSFET: CSD16325Q5
The OMO Electronic CSD16325Q5 N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. The TI CSD16325Q5 NexFET MOSFET is optimized for 5V gate drive applications and boasts ultralow Gate Charge Total and Gate Charge Gate to Drain and low thermal resistance. The TI CSD16325Q5 NexFET Power MOSFET is avalanche rated and optimized for Synchronous FET applications and Point-of-Load Synchronous Buck in networking, telecom, and computing systems.
Teil # Beschreibung Aktie Preis
CSD16325Q5
DISTI # 296-24964-1-ND
MOSFET N-CH 25V 5X6 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11420In Stock
  • 1000:$1.0449
  • 500:$1.2610
  • 100:$1.6213
  • 10:$2.0180
  • 1:$2.2300
CSD16325Q5
DISTI # 296-24964-6-ND
MOSFET N-CH 25V 5X6 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11420In Stock
  • 1000:$1.0449
  • 500:$1.2610
  • 100:$1.6213
  • 10:$2.0180
  • 1:$2.2300
CSD16325Q5
DISTI # 296-24964-2-ND
MOSFET N-CH 25V 5X6 100A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
7500In Stock
  • 5000:$0.9095
  • 2500:$0.9445
CSD16325Q5C
DISTI # 296-25645-2-ND
MOSFET N-CH 25V 100A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$1.1821
CSD16325Q5C
DISTI # 296-25645-1-ND
MOSFET N-CH 25V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$1.3077
  • 500:$1.5783
  • 100:$2.0292
  • 10:$2.5250
  • 1:$2.8000
CSD16325Q5C
DISTI # 296-25645-6-ND
MOSFET N-CH 25V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$1.3077
  • 500:$1.5783
  • 100:$2.0292
  • 10:$2.5250
  • 1:$2.8000
CSD16325Q5
DISTI # CSD16325Q5
Trans MOSFET N-CH 25V 33A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16325Q5)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.9229
  • 5000:$0.8779
  • 10000:$0.8489
  • 15000:$0.8199
  • 25000:$0.7969
CSD16325Q5N-Channel NexFET&#153,Power MOSFET7410
  • 1000:$0.7200
  • 750:$0.7900
  • 500:$0.9600
  • 250:$1.1500
  • 100:$1.2400
  • 25:$1.4300
  • 10:$1.5300
  • 1:$1.7100
CSD16325Q5CPower Field-Effect Transistor, 33A I(D), 25V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
5000
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
CSD16325Q5
DISTI # 595-CSD16325Q5
MOSFET N-Channel NexFET Power MOSFET
RoHS: Compliant
3443
  • 1:$1.8800
  • 10:$1.5900
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9230
  • 2500:$0.8590
CSD16325Q5C
DISTI # 595-CSD16325Q5C
MOSFET DualCool N-Channel NexFET Power MOSFET
RoHS: Compliant
4400
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.6000
  • 500:$1.4000
  • 1000:$1.1600
  • 2500:$1.0800
  • 5000:$1.0400
CSD16325Q5 1000
    CSD16325Q5C 52
    • 3:$1.8000
    • 13:$1.3500
    • 39:$1.1250
    CSD16325Q5C 41
    • 15:$1.5000
    • 3:$1.8000
    • 1:$2.4000
    CSD16325Q5 2224
      CSD16325Q5
      DISTI # 2118922
      N CHANNEL MOSFET, 25V, 100A
      RoHS: Compliant
      0
      • 2500:£0.7930
      CSD16325Q5C
      DISTI # 1791478
      MOSFET, N CH, 25V, 33A, 8SON
      RoHS: Compliant
      13
      • 1:£1.4200
      • 10:£1.3900
      CSD16325Q5
      DISTI # 2118922
      N CHANNEL MOSFET, 25V, 100A
      RoHS: Compliant
      0
      • 1:$2.9800
      • 10:$2.5200
      • 100:$2.0300
      • 500:$1.7800
      • 1000:$1.4600
      • 2500:$1.3600
      Bild Teil # Beschreibung
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      Neu und Original
      CSD16325Q5C

      Mfr.#: CSD16325Q5C

      OMO.#: OMO-CSD16325Q5C-TEXAS-INSTRUMENTS

      MOSFET N-CH 25V 100A 8SON
      CSD16407Q5C

      Mfr.#: CSD16407Q5C

      OMO.#: OMO-CSD16407Q5C-TEXAS-INSTRUMENTS

      IGBT Transistors MOSFET DualCool N-Channel NexFET Power MOSFET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von CSD16325Q5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,08 $
      1,08 $
      10
      1,03 $
      10,26 $
      100
      0,97 $
      97,20 $
      500
      0,92 $
      459,00 $
      1000
      0,86 $
      864,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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