PartNumber | CSD16301Q2 | CSD16301Q2 . . . | CSD16321 |
Description | MOSFET N-Channel NexFET Power MOSFET | ||
Manufacturer | Texas Instruments | - | Texas Instruments |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | WSON-6 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 5 A | - | - |
Rds On Drain Source Resistance | 24 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 2 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 15 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | NexFET | - | NexFET |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 0.75 mm | - | - |
Length | 2 mm | - | - |
Series | CSD16301Q2 | - | NexFET |
Transistor Type | 1 N-Channel Power MOSFET | - | 1 N-Channel |
Width | 2 mm | - | - |
Brand | Texas Instruments | - | - |
Fall Time | 1.7 ns | - | 17 ns |
Product Type | MOSFET | - | - |
Rise Time | 4.4 ns | - | 15 ns |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 4.1 ns | - | 27 ns |
Typical Turn On Delay Time | 2.7 ns | - | 9 ns |
Unit Weight | 0.000307 oz | - | - |
Package Case | - | - | 8-PowerTDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-VSON (5x6) |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 3.1W |
Drain to Source Voltage Vdss | - | - | 25V |
Input Capacitance Ciss Vds | - | - | 3100pF @ 12.5V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 31A (Ta), 100A (Tc) |
Rds On Max Id Vgs | - | - | 2.4 mOhm @ 25A, 8V |
Vgs th Max Id | - | - | 1.4V @ 250μA |
Gate Charge Qg Vgs | - | - | 19nC @ 4.5V |
Pd Power Dissipation | - | - | 3.1 W |
Vgs Gate Source Voltage | - | - | 10 V |
Id Continuous Drain Current | - | - | 31 A |
Vds Drain Source Breakdown Voltage | - | - | 25 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.1 V |
Rds On Drain Source Resistance | - | - | 2.1 mOhms |
Qg Gate Charge | - | - | 14 nC |