CSD16340Q3

Mfr. #:: CSD16340Q3
Beschreibung:: MOSFET N-CH 25V 60A 8SON
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD16340Q3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD16340Q3 Mehr Informationen CSD16340Q3 Product Details

Produkteigenschaft
Attributwert

Hersteller: Texas Instruments

Produktkategorie: FETs - Einzeln

Serie: NexFET

Verpackung: Digi-ReelR Alternative Verpackung

Montageart: SMD/SMT

Handelsname: NexFET

Paket-Koffer: 8-PowerTDFN

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: 8-VSON (3.3x3.3)

Aufbau: Single

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 3W

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 25V

Eingangskapazität-Ciss-Vds: 1350pF @ 12.5V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 21A (Ta), 60A (Tc)

Rds-On-Max-Id-Vgs: 4.5 mOhm @ 20A, 8V

Vgs-th-Max-Id: 1.1V @ 250μA

Gate-Lade-Qg-Vgs: 9.2nC @ 4.5V

Pd-Verlustleistung: 3 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 5.2 ns

Anstiegszeit: 16.1 ns

Vgs-Gate-Source-Spannung: 10 V

ID-Dauer-Drain-Strom: 21 A

Vds-Drain-Source-Breakdown-Voltage: 25 V

Vgs-th-Gate-Source-Threshold-Voltage: 850 mV

Rds-On-Drain-Source-Widerstand: 4.3 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 13.8 ns

Typische-Einschaltverzögerungszeit: 4.8 ns

Qg-Gate-Ladung: 6.5 nC

Vorwärts-Transkonduktanz-Min: 121 S

Tags: CSD16340, CSD1634, CSD163, CSD16, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD16340Q3 Beschreibung

***as Instruments: 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150

***ical: Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R

***ark: N CHANNEL MOSFET, 25V, 60A, SON

***nell: MOSFET, N CH, 25V, 21A, 8SON, FULL REEL

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion and optimized for 5v gate drive applications.

***ponent Sense: FET N-CH CSD16340Q3 25V 0.0055OHM 2

CSD16340Q3 Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET™ Power MOSFET: CSD16340Q3: The OMO Electronic CSD16340Q3 NexFET™ Power MOSFET is designed to minimize losses in power conversion and is optimized for 5V gate drive applications. The TI CSD16340Q3 NexFET Power MOSFET is resistance rated at Vgs = 2.5V and also features ultra low Qg and Qgd. The TI CSD16340Q3 NexFET offers low thermal resistance and is also ideal for control or synchronous FET applications.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD16340Q3 DISTI # 296-25646-1-ND	MOSFET N-CH 25V 60A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15164In Stock	1000:$0.5591 500:$0.7082 100:$0.9133 10:$1.1560 1:$1.3000
CSD16340Q3 DISTI # 296-25646-6-ND	MOSFET N-CH 25V 60A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15164In Stock	1000:$0.5591 500:$0.7082 100:$0.9133 10:$1.1560 1:$1.3000
CSD16340Q3 DISTI # 296-25646-2-ND	MOSFET N-CH 25V 60A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	5000:$0.4813 2500:$0.5067
CSD16340Q3T DISTI # 296-47752-1-ND	MOSFET N-CHANNEL 25V 60A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3240In Stock	100:$1.0493 10:$1.3280 1:$1.5000
CSD16340Q3T DISTI # 296-47752-6-ND	MOSFET N-CHANNEL 25V 60A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3240In Stock	100:$1.0493 10:$1.3280 1:$1.5000
CSD16340Q3T DISTI # 296-47752-2-ND	MOSFET N-CHANNEL 25V 60A 8VSON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	3000In Stock	1250:$0.6237 750:$0.6902 500:$0.7900 250:$0.8940
CSD16340Q3 DISTI # CSD16340Q3	Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R (Alt: CSD16340Q3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD16340Q3 DISTI # CSD16340Q3	Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16340Q3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4769 5000:$0.4539 10000:$0.4389 15000:$0.4239 25000:$0.4119
CSD16340Q3T DISTI # CSD16340Q3T	Trans MOSFET N-CH 25V 60A 8-Pin SON T/R (Alt: CSD16340Q3T) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD16340Q3T DISTI # CSD16340Q3T	Trans MOSFET N-CH 25V 60A 8-Pin SON T/R - Tape and Reel (Alt: CSD16340Q3T) RoHS: Not Compliant Min Qty: 750 Container: Reel	Americas - 0	750:$0.5479 1250:$0.5219 2000:$0.5039 3750:$0.4869 7500:$0.4739
CSD16340Q3 DISTI # 78R8872	MOSFET, N CH, 25V, 21A, 8SON,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:25V,On Resistance Rds(on):3.8mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:850mV,Power Dissipation , RoHS Compliant: Yes	0
CSD16340Q3	25V, N Channel NexFET&#153,Power MOSFET	1709	1000:$0.3700 750:$0.4200 500:$0.5200 250:$0.6400 100:$0.6900 25:$0.8100 10:$0.8800 1:$0.9800
CSD16340Q3T	25V, N Channel NexFET&#153,Power MOSFET	1000	1000:$0.4300 750:$0.4800 500:$0.6000 250:$0.7400 100:$0.8000 25:$0.9300 10:$1.0100 1:$1.1300
CSD16340Q3 DISTI # 595-CSD16340Q3	MOSFET N Channel NexFET Power MOSFET RoHS: Compliant	50031	1:$1.0800 10:$0.9200 100:$0.7080 500:$0.6260 1000:$0.4940 2500:$0.4380
CSD16340Q3T DISTI # 595-CSD16340Q3T	MOSFET 25V, -55 to 150 RoHS: Not compliant	555	1:$1.2500 10:$1.0600 100:$0.8130
CSD16340Q3	Power Field-Effect Transistor, 21A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1259	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
CSD16340Q3 DISTI # 8274732P	MOSFET N-CHANNEL 25V 21A NEXFET SON8EP, RL	2120	50:£0.6660 100:£0.5140 250:£0.4820 500:£0.4520
CSD16340Q3	POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 25V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	123	77:$0.4620 16:$0.6600 1:$1.3200
CSD16340Q3 DISTI # 1791481	MOSFET, N CH, 25V, 21A, 8SON RoHS: Compliant	111	5:£0.7760 25:£0.6960 100:£0.5360 250:£0.5050 500:£0.4730
CSD16340Q3 DISTI # XSFP00000105780	PowerField-EffectTransistor,21AI(D),25V,0.0078ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET RoHS: Compliant	3365	2500:$0.5200 3365:$0.4875
CSD16340Q3 DISTI # 1791481	MOSFET, N CH, 25V, 21A, 8SON RoHS: Compliant	111	1:$1.7200 10:$1.4600 100:$1.1300 500:$0.9910 1000:$0.7820 2500:$0.6930

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: CSD16327Q3 OMO.#: OMO-CSD16327Q3	MOSFET N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD16325Q5A OMO.#: OMO-CSD16325Q5A-TEXAS-INSTRUMENTS	Neu und Original
	Mfr.#: CSD16407Q5A OMO.#: OMO-CSD16407Q5A-TEXAS-INSTRUMENTS	Neu und Original
	Mfr.#: CSD16409Q3 OMO.#: OMO-CSD16409Q3-TEXAS-INSTRUMENTS	Neu und Original
	Mfr.#: CSD16413Q5A/TI OMO.#: OMO-CSD16413Q5A-TI-TEXAS-INSTRUMENTS	Neu und Original
	Mfr.#: CSD16415Q5T OMO.#: OMO-CSD16415Q5T-TEXAS-INSTRUMENTS	MOSFET N-CH 25V 100A 8VSON
	Mfr.#: CSD16327Q3 OMO.#: OMO-CSD16327Q3-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
	Mfr.#: CSD16321Q5C OMO.#: OMO-CSD16321Q5C-TEXAS-INSTRUMENTS	MOSFET N-CH 25V 100A 8SON
	Mfr.#: CSD16323Q3 OMO.#: OMO-CSD16323Q3-TEXAS-INSTRUMENTS	MOSFET N-CH 25V 3.3X3.3 8-SON
	Mfr.#: CSD16414Q5 OMO.#: OMO-CSD16414Q5-TEXAS-INSTRUMENTS	MOSFET N-CH 25V 100A 8-SON

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von CSD16340Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,56 $~~; ~~0,56 $~~

10: ~~0,53 $~~; ~~5,27 $~~

100: ~~0,50 $~~; ~~49,95 $~~

500: ~~0,47 $~~; ~~235,90 $~~

1000: ~~0,44 $~~; ~~444,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD16340Q3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes