PartNumber | CSD16321Q5 | CSD16321 | CSD16321C |
Description | MOSFET N-Channel NexFET Power MOSFET | ||
Manufacturer | Texas Instruments | Texas Instruments | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | VSON-CLIP-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 5 A | - | - |
Rds On Drain Source Resistance | 2.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 14 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 113 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1 mm | - | - |
Length | 6 mm | - | - |
Series | CSD16321Q5 | NexFET | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5 mm | - | - |
Brand | Texas Instruments | - | - |
Forward Transconductance Min | 150 S | - | - |
Development Kit | TPS51218EVM-49, TPS40304EVM-353 | - | - |
Fall Time | 17 ns | 17 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 15 ns | 15 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 27 ns | 27 ns | - |
Typical Turn On Delay Time | 9 ns | 9 ns | - |
Unit Weight | 0.004141 oz | - | - |
Package Case | - | 8-PowerTDFN | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-VSON (5x6) | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 3.1W | - |
Drain to Source Voltage Vdss | - | 25V | - |
Input Capacitance Ciss Vds | - | 3100pF @ 12.5V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 31A (Ta), 100A (Tc) | - |
Rds On Max Id Vgs | - | 2.4 mOhm @ 25A, 8V | - |
Vgs th Max Id | - | 1.4V @ 250μA | - |
Gate Charge Qg Vgs | - | 19nC @ 4.5V | - |
Pd Power Dissipation | - | 3.1 W | - |
Vgs Gate Source Voltage | - | 10 V | - |
Id Continuous Drain Current | - | 31 A | - |
Vds Drain Source Breakdown Voltage | - | 25 V | - |
Vgs th Gate Source Threshold Voltage | - | 1.1 V | - |
Rds On Drain Source Resistance | - | 2.1 mOhms | - |
Qg Gate Charge | - | 14 nC | - |