SIHP22N60S-E3

SIHP22N60S-E3
Mfr. #:
SIHP22N60S-E3
Hersteller:
Vishay Siliconix
Beschreibung:
IGBT Transistors MOSFET 600V N-Channel Superjunction TO-220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP22N60S-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay / Siliconix
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
E
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
250 W
Abfallzeit
59 ns
Anstiegszeit
68 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
22 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Widerstand
160 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
77 ns
Typische-Einschaltverzögerungszeit
24 ns
Qg-Gate-Ladung
75 nC
Vorwärts-Transkonduktanz-Min
9.4 S
Tags
SIHP22N60S, SIHP22N60, SIHP22, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB
***ure Electronics
S-Series N-Channel 650 V 0.19 O 110 nC Flange Mount Power Mosfet - TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 22A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SIHP22N60S-E3
DISTI # 74R0210
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 22ATO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    SIHP22N60S-E3
    DISTI # 781-SIHP22N60S-E3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    0
      SIHP22N60S-E3Vishay Intertechnologies 125
        SIHP22N60S-E3
        DISTI # 1794787
        Vishay IntertechnologiesMOSFET, N CH, 600V, 22A, TO220
        RoHS: Compliant
        0
        • 1:£4.0800
        • 10:£3.0500
        • 100:£2.5100
        • 250:£2.4300
        • 500:£2.1800
        Bild Teil # Beschreibung
        SIHP22N60EF-GE3

        Mfr.#: SIHP22N60EF-GE3

        OMO.#: OMO-SIHP22N60EF-GE3

        MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
        SIHP22N60AEL-GE3

        Mfr.#: SIHP22N60AEL-GE3

        OMO.#: OMO-SIHP22N60AEL-GE3

        MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N60AE-GE3

        Mfr.#: SIHP22N60AE-GE3

        OMO.#: OMO-SIHP22N60AE-GE3

        MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N60E

        Mfr.#: SIHP22N60E

        OMO.#: OMO-SIHP22N60E-1190

        Neu und Original
        SIHP22N60E-E3,SIHP22N60S

        Mfr.#: SIHP22N60E-E3,SIHP22N60S

        OMO.#: OMO-SIHP22N60E-E3-SIHP22N60S-1190

        Neu und Original
        SIHP22N60EE3

        Mfr.#: SIHP22N60EE3

        OMO.#: OMO-SIHP22N60EE3-1190

        Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP22N60EGE3

        Mfr.#: SIHP22N60EGE3

        OMO.#: OMO-SIHP22N60EGE3-1190

        Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP22N60S

        Mfr.#: SIHP22N60S

        OMO.#: OMO-SIHP22N60S-1190

        Neu und Original
        SIHP22N60S-E3/45

        Mfr.#: SIHP22N60S-E3/45

        OMO.#: OMO-SIHP22N60S-E3-45-1190

        Neu und Original
        SIHP22N60AE-GE3

        Mfr.#: SIHP22N60AE-GE3

        OMO.#: OMO-SIHP22N60AE-GE3-VISHAY

        MOSFET N-CH 600V 20A TO220AB
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von SIHP22N60S-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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