TGF2160

TGF2160
Mfr. #:
TGF2160
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TGF2160 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
TGF2160 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
TriQuint (Qorvo)
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Tablett
Teil-Aliasnamen
1098617
Montageart
SMD/SMT
Betriebstemperaturbereich
- 65 C to + 150 C
Technologie
GaAs
Aufbau
Dual
Transistor-Typ
pHEMT
Gewinnen
10.4 dB
Pd-Verlustleistung
5.6 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 65 C
Arbeitsfrequenz
20 GHz
ID-Dauer-Drain-Strom
517 mA
Vds-Drain-Source-Breakdown-Voltage
12 V
Vorwärts-Transkonduktanz-Min
619 mS
Vgs-Gate-Source-Breakdown-Voltage
- 7 V
P1dB-Kompressionspunkt
32.5 dBm
Tags
TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2160 1600µm Discrete GaAs pHEMT
Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Teil # Mfg. Beschreibung Aktie Preis
TGF2160
DISTI # 772-TGF2160
QorvoRF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
RoHS: Compliant
0
  • 100:$17.2700
  • 300:$16.1400
  • 500:$15.0900
Bild Teil # Beschreibung
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Mfr.#: TGF3020-SM-EVB1

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TGF2022-2

Mfr.#: TGF2022-2

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Neu und Original
TGF4350-EPU

Mfr.#: TGF4350-EPU

OMO.#: OMO-TGF4350-EPU-1190

Neu und Original
TGFSB

Mfr.#: TGFSB

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TG FIBER SPOOL BRACKET
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von TGF2160 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
22,64 $
22,64 $
10
21,50 $
215,03 $
100
20,37 $
2 037,15 $
500
19,24 $
9 619,90 $
1000
18,11 $
18 108,00 $
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