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CSD25213W10

CSD25213W10
Mfr. #:
CSD25213W10
Beschreibung:
MOSFET P-CH NexFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD25213W10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD25213W10 Mehr Informationen CSD25213W10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DSBGA-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
1.6 A
Rds On - Drain-Source-Widerstand:
67 mOhms
Vgs th - Gate-Source-Schwellenspannung:
850 mV
Vgs - Gate-Source-Spannung:
6 V
Qg - Gate-Ladung:
2.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
0.62 mm
Länge:
1 mm
Serie:
CSD25213W10
Transistortyp:
1 P-Channel
Breite:
1 mm
Marke:
Texas Instruments
Abfallzeit:
970 ns
Produktart:
MOSFET
Anstiegszeit:
520 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
1 us
Typische Einschaltverzögerungszeit:
510 ns
Gewichtseinheit:
0.000039 oz
Tags
CSD252, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm 4-DSBGA -55 to 150
***p One Stop Global
Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R
***i-Key
MOSFET P-CH 20V 1.6A 4DSBGA
***ark
20V Pch Mosfet
***AS
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
NexFET P-Channel Power MOSFETs
OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
TI P-Channel MOSFETs - 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD25213W10
DISTI # 296-40004-1-ND		MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5685In Stock
  • 1000:$0.1570
  • 500:$0.2094
  • 100:$0.3053
  • 10:$0.4450
  • 1:$0.5700
CSD25213W10
DISTI # 296-40004-6-ND		MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5685In Stock
  • 1000:$0.1570
  • 500:$0.2094
  • 100:$0.3053
  • 10:$0.4450
  • 1:$0.5700
CSD25213W10
DISTI # 296-40004-2-ND		MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.1228
  • 6000:$0.1313
  • 3000:$0.1398
CSD25213W10
DISTI # CSD25213W10		Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD25213W10)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.1109
  • 12000:$0.1059
  • 18000:$0.1019
  • 30000:$0.0989
  • 60000:$0.0959
CSD25213W10
DISTI # CSD25213W10		Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    CSD25213W10
    DISTI # CSD25213W10    		Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.1779
    • 6000:€0.1359
    • 12000:€0.1219
    • 18000:€0.1009
    • 30000:€0.0929
    CSD25213W10P-Channel NexFET&#153,Power MOSFET6000
    • 1000:$0.0900
    • 750:$0.1000
    • 500:$0.1200
    • 250:$0.1500
    • 100:$0.1600
    • 25:$0.1900
    • 10:$0.2100
    • 1:$0.2300
    CSD25213W10
    DISTI # 595-CSD25213W10    		MOSFET P-CH NexFET Pwr MOSFET
    RoHS: Compliant    		10655
    • 1:$0.4500
    • 10:$0.3400
    • 100:$0.1850
    • 1000:$0.1390
    • 3000:$0.1200
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    Mfr.#: PIC18LF47K42-I/MV

    OMO.#: OMO-PIC18LF47K42-I-MV

    		 8-bit Microcontrollers - MCU 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG, HLT, WWDT, SCAN/CRC, ZCD, PPS, UART, SPI/I2C, IDLE/DOZE/PMD
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    OMO.#: OMO-LM3481MM-NOPB

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    Verfügbarkeit
    Aktie:
    15
    Auf Bestellung:
    1998
    Menge eingeben:
    Der aktuelle Preis von CSD25213W10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,45 $
    0,45 $
    10
    0,34 $
    3,40 $
    100
    0,18 $
    18,50 $
    1000
    0,14 $
    139,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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