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IPD30N06S3-24

IPD30N06S3-24
Mfr. #:
IPD30N06S3-24
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N06S3-24)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD30N06S3-24 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
DMN Series 40 V 11.5 mOhm 1.6 W SMT N-Ch Enhancement Mode Mosfet - SOT-252-3L
***et Europe
Trans MOSFET N-CH 40V 39A 3-Pin TO-252 T/R
***ical
Trans MOSFET N-CH 40V 11.9A 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
MOSFET N-Ch 40V 39A Enhancement TO252
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***el Electronic
Power Field-Effect Transistor, 11.9A I(D), 40V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 5.7mΩ
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***et
TRANS MOSFET N-CH 20V 35A 3PIN TO-252
***ser
MOSFETs 20V,35A,5.5 OHM, NCH, DPAK, PO
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:77W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:35A; Package / Case:DPAK; Power Dissipation Pd:77W; Power Dissipation Pd:77W; Pulse Current Idm:354A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.2V
***ure Electronics
Single N-Channel 60 V 35 mOhm 10 nC OptiMOS™ Power Mosfet - TO-252-3
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 60V, 29A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***o-Tech
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
***ure Electronics
N-Channel 30 V 9 mOhm 15 nC OptiMOS™3 Power-Transistor - TO-252-3
***ark
MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
IPD30N06S3-24
DISTI # IPD30N06S3-24		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N06S3-24)
RoHS: Not Compliant
Min Qty: 1389
Container: Bulk		Americas - 0
  • 13890:$0.2279
  • 6945:$0.2319
  • 4167:$0.2399
  • 2778:$0.2499
  • 1389:$0.2589
IPD30N06S3-24
DISTI # 726-IPD30N06S3-24		Infineon Technologies AGMOSFET N-Ch 55V 30A DPAK-2
RoHS: Compliant		0
    IPD30N06S3-24Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		2447
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    Bild Teil # Beschreibung
    IPD30N08S2L-21

    Mfr.#: IPD30N08S2L-21

    OMO.#: OMO-IPD30N08S2L-21

    		 MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
    IPD30N03S4L09ATMA1

    Mfr.#: IPD30N03S4L09ATMA1

    OMO.#: OMO-IPD30N03S4L09ATMA1

    		 MOSFET N-CHANNEL_30/40V
    IPD30N03S4L09ATMA1

    Mfr.#: IPD30N03S4L09ATMA1

    OMO.#: OMO-IPD30N03S4L09ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 30A TO252-3
    IPD30N08S2L21ATMA1-CUT TAPE

    Mfr.#: IPD30N08S2L21ATMA1-CUT TAPE

    OMO.#: OMO-IPD30N08S2L21ATMA1-CUT-TAPE-1190

    		 Neu und Original
    IPD30N06S2-15 2N0615

    Mfr.#: IPD30N06S2-15 2N0615

    OMO.#: OMO-IPD30N06S2-15-2N0615-1190

    		 Neu und Original
    IPD30N03S2L-20

    Mfr.#: IPD30N03S2L-20

    OMO.#: OMO-IPD30N03S2L-20-1190

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
    IPD30N03S2L20ATMA1

    Mfr.#: IPD30N03S2L20ATMA1

    OMO.#: OMO-IPD30N03S2L20ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 30A TO252-3
    IPD30N03S4L14ATMA1

    Mfr.#: IPD30N03S4L14ATMA1

    OMO.#: OMO-IPD30N03S4L14ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 30A TO252-3
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 30A TO252-3
    IPD30N08S2L21ATMA1

    Mfr.#: IPD30N08S2L21ATMA1

    OMO.#: OMO-IPD30N08S2L21ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 30A TO252-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von IPD30N06S3-24 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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