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IPI076N12N3GAKSA1

IPI076N12N3GAKSA1
Mfr. #:
IPI076N12N3GAKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 120V 100A TO262-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI076N12N3GAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPI076N12N3G, IPI076N12, IPI076, IPI07, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO262-3-3, RoHS
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 150 V 7.5 mOhm 70 nC OptiMOS™ Power Mosfet - I2PAK
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO262-3-3, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 150V, PG-TO262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:100A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 7.5 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 46 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) I2PAK Tube
***el Electronic
IC INTFACE SPECIALIZED 36VFQFPN
***icroelectronics SCT
Power MOSFETs, 100V, 110A, I2PAK, Tube
***et
Trans MOSFET N-CH 100V 70A 3-Pin TO-262 Tube
***ronik
N-CH 100V 70A 12mOhm TO262-3
***et Europe
Nchannel 100V 70A 12.1mO
*** Electronics
N-CHANNEL POWER MOSFET
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ser
Power MOSFET Transistors N Ch 100V 0.019Ohm 80A
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***el Electronic
CAP CER 0.068UF 50V C0G 1210
Teil # Mfg. Beschreibung Aktie Preis
IPI076N12N3GAKSA1
DISTI # V99:2348_06382959		Infineon Technologies AGTrans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		500
  • 100:$2.1140
  • 25:$2.2390
  • 10:$2.4520
  • 1:$2.9579
IPI076N12N3GAKSA1
DISTI # V36:1790_06382959		Infineon Technologies AGTrans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		350
  • 100:$2.1140
  • 25:$2.2390
  • 10:$2.4520
  • 1:$2.9579
IPI076N12N3GAKSA1
DISTI # IPI076N12N3GAKSA1-ND		Infineon Technologies AGMOSFET N-CH 120V 100A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.7611
IPI076N12N3GAKSA1
DISTI # 31592862		Infineon Technologies AGTrans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		675
  • 9:$1.2401
IPI076N12N3GAKSA1
DISTI # 31597101		Infineon Technologies AGTrans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		500
  • 5:$2.9579
IPI076N12N3GAKSA1
DISTI # 30329792		Infineon Technologies AGTrans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		350
  • 5:$2.9579
IPI076N12N3GXK
DISTI # IPI076N12N3GAKSA1		Infineon Technologies AGTrans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI076N12N3GAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$1.1900
  • 2000:$1.2900
  • 3000:$1.2900
  • 500:$1.3900
  • 1000:$1.3900
IPI076N12N3 G
DISTI # 726-IPI076N12N3G		Infineon Technologies AGMOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3
RoHS: Compliant		500
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
IPI076N12N3GAKSA1
DISTI # IPI076N12N3GAKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,120V,100A,168W,PG-TO262-3333
  • 50:$1.4200
  • 10:$1.5200
  • 3:$1.6900
  • 1:$1.9100
Bild Teil # Beschreibung
IPI076N12N3 G

Mfr.#: IPI076N12N3 G

OMO.#: OMO-IPI076N12N3-G

 MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3
IPI076N15N5AKSA1

Mfr.#: IPI076N15N5AKSA1

OMO.#: OMO-IPI076N15N5AKSA1

 MOSFET
IPI076N15N5AKSA1

Mfr.#: IPI076N15N5AKSA1

OMO.#: OMO-IPI076N15N5AKSA1-INFINEON-TECHNOLOGIES

 MV POWER MOS
IPI076N12N3GXK

Mfr.#: IPI076N12N3GXK

OMO.#: OMO-IPI076N12N3GXK-1190

 Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI076N12N3GAKSA1)
IPI076N12N3

Mfr.#: IPI076N12N3

OMO.#: OMO-IPI076N12N3-1190

 Neu und Original
IPI076N12N3G

Mfr.#: IPI076N12N3G

OMO.#: OMO-IPI076N12N3G-1190

 Neu und Original
IPI076N12N3GAKSA1

Mfr.#: IPI076N12N3GAKSA1

OMO.#: OMO-IPI076N12N3GAKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 120V 100A TO262-3
IPI076N12N3 G

Mfr.#: IPI076N12N3 G

OMO.#: OMO-IPI076N12N3-G-124

 Darlington Transistors MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPI076N12N3GAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,24 $
2,24 $
10
2,12 $
21,23 $
100
2,01 $
201,15 $
500
1,90 $
949,90 $
1000
1,79 $
1 788,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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