 | |  | |
| PartNumber | IPI072N10N3 G | IPI070N08N3 G | IPI070N06N G |
| Description | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 | MOSFET N-KANAL POWER MOS | MOSFET N-CH 60V 80A TO220-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 80 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 7.2 mOhms | 7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | OptiMOS 3 | IPI070N08 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 9 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 37 ns | 66 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 37 ns | 31 ns | - |
| Typical Turn On Delay Time | 19 ns | 16 ns | - |
| Part # Aliases | IPI072N10N3GXKSA1 IPI72N1N3GXK SP000680674 | SP000680672 | - |
| Unit Weight | 0.073511 oz | 0.073511 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI076N12N3 G | MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3 | |
| IPI075N15N3GXKSA1 | MOSFET MV POWER MOS | ||
| IPI072N10N3 G | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 | ||
| IPI076N15N5AKSA1 | MOSFET | ||
| IPI076N15N5AKSA1 | MV POWER MOS | ||
| IPI072N10N3GXK | MOSFET N-CH 100V 80A TO262-3 | ||
| IPI070N06N G | MOSFET N-CH 60V 80A TO220-3 | ||
| IPI070N08N3 G | MOSFET N-CH 80V 80A TO262-3 | ||
| IPI072N10N3GXKSA1 | MOSFET N-CH 100V 80A TO262-3 | ||
| IPI075N15N3GHKSA1 | MOSFET N-CH 150V 100A TO262-3 | ||
| IPI075N15N3GXKSA1 | MOSFET N-CH 150V 100A TO262-3 | ||
| IPI076N12N3GAKSA1 | MOSFET N-CH 120V 100A TO262-3 | ||
Infineon Technologies |
IPI070N08N3 G | MOSFET N-KANAL POWER MOS | |
| IPI075N15N3GHKSA1 | MOSFET MV POWER MOS | ||
| IPI075N15N3G | Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI076N12N3GXK | Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI076N12N3GAKSA1) | ||
| IPI075N15N3GXK | Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI075N15N3GXKSA1) | ||
| IPI070N06NG | Neu und Original | ||
| IPI070N08N3 | Neu und Original | ||
| IPI072N10N3 | Neu und Original | ||
| IPI072N10N3G | Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube - Bulk (Alt: IPI072N10N3 G) | ||
| IPI075N15N3 | - Bulk (Alt: IPI075N15N3) | ||
| IPI076N12N3 | Neu und Original | ||
| IPI076N12N3G | Neu und Original | ||
| IPI076N12N3 G | Darlington Transistors MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3 | ||
| IPI072N10N3 G | Darlington Transistors MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 | ||
| IPI075N15N3 G | MOSFET N-Ch 150V 100A I2PAK-3 OptiMOS 3 |