FDFM2N111

FDFM2N111
Mfr. #:
FDFM2N111
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDFM2N111 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MLP-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs - Gate-Source-Spannung:
12 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.7 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3 mm
Produkt:
MOSFET Kleinsignal
Serie:
FDFM2N111
Transistortyp:
2 N-Channel
Breite:
3 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
6 ns
Gewichtseinheit:
0.005832 oz
Tags
FDFM2, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ
***ark
Transistor,mosfet,n-Channel,20V V(Br)Dss,4A I(D),llcc
***rchild Semiconductor
FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.
Teil # Mfg. Beschreibung Aktie Preis
FDFM2N111
DISTI # FDFM2N111CT-ND
ON SemiconductorMOSFET N-CH 20V 4A 3X3 MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDFM2N111
    DISTI # FDFM2N111DKR-ND
    ON SemiconductorMOSFET N-CH 20V 4A 3X3 MLP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDFM2N111
      DISTI # FDFM2N111TR-ND
      ON SemiconductorMOSFET N-CH 20V 4A 3X3 MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.3998
      FDFM2N111
      DISTI # FDFM2N111
      ON SemiconductorTrans MOSFET N-CH 20V 4A 6-Pin MLP EP T/R (Alt: FDFM2N111)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 3000:€0.6829
      • 6000:€0.5319
      • 12000:€0.4409
      • 18000:€0.3719
      • 30000:€0.3449
      FDFM2N111
      DISTI # FDFM2N111
      ON SemiconductorTrans MOSFET N-CH 20V 4A 6-Pin MLP EP T/R - Tape and Reel (Alt: FDFM2N111)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.3389
      • 6000:$0.3369
      • 12000:$0.3319
      • 18000:$0.3279
      • 30000:$0.3199
      FDFM2N111Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      19158
      • 1000:$0.3800
      • 500:$0.4000
      • 100:$0.4200
      • 25:$0.4400
      • 1:$0.4700
      FDFM2N111Fairchild Semiconductor Corporation 3000
        Bild Teil # Beschreibung
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        IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
        FDFMA2P853.

        Mfr.#: FDFMA2P853.

        OMO.#: OMO-FDFMA2P853--1190

        Trans MOSFET P-CH 20V 3A 6-Pin MicroFET T/R - Bulk (Alt: FDFMA2P853T)
        FDFMA2P853/853F

        Mfr.#: FDFMA2P853/853F

        OMO.#: OMO-FDFMA2P853-853F-1190

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        MOSFET P-CH 20V 3A MICROFET2X2
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        Mfr.#: FDFMA2P859T

        OMO.#: OMO-FDFMA2P859T-ON-SEMICONDUCTOR

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        Mfr.#: FDFMA3W109

        OMO.#: OMO-FDFMA3W109-1190

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        OMO.#: OMO-FDFMJ2P023Z-ON-SEMICONDUCTOR

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        Mfr.#: FDFMR2P853

        OMO.#: OMO-FDFMR2P853-1190

        Neu und Original
        Verfügbarkeit
        Aktie:
        889
        Auf Bestellung:
        2872
        Menge eingeben:
        Der aktuelle Preis von FDFM2N111 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,85 $
        0,85 $
        10
        0,73 $
        7,27 $
        100
        0,56 $
        55,90 $
        500
        0,49 $
        247,00 $
        1000
        0,39 $
        390,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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