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FDFMA3N109

FDFMA3N109
Mfr. #:
FDFMA3N109
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET PowerTrench MOSFET and Schottky Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDFMA3N109 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MicroFET-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
2.9 A
Rds On - Drain-Source-Widerstand:
123 mOhms
Vgs - Gate-Source-Spannung:
12 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2 mm
Produkt:
MOSFET Kleinsignal
Serie:
FDFMA3N109
Transistortyp:
1 N-Channel
Breite:
2 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
6 ns
Gewichtseinheit:
0.002116 oz
Tags
FDFMA3, FDFMA, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
***ment14 APAC
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Teil # Mfg. Beschreibung Aktie Preis
FDFMA3N109
DISTI # V72:2272_06337763		ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
  • 1:$0.6695
FDFMA3N109
DISTI # FDFMA3N109FSCT-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSDKR-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSTR-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		21000In Stock
  • 3000:$0.3155
FDFMA3N109
DISTI # 25745010		ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 29:$0.5657
FDFMA3N109
DISTI # FDFMA3N109		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3319
  • 6000:€0.2719
  • 12000:€0.2489
  • 18000:€0.2299
  • 30000:€0.2129
FDFMA3N109
DISTI # FDFMA3N109		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2359
  • 6000:$0.2339
  • 12000:$0.2309
  • 18000:$0.2279
  • 30000:$0.2219
FDFMA3N109
DISTI # 04M9094		ON SemiconductorTRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$0.2670
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		75450
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
FDFMA3N109
DISTI # 512-FDFMA3N109		ON SemiconductorMOSFET PowerTrench MOSFET and Schottky Diode
RoHS: Compliant		5668
  • 1:$0.7400
  • 10:$0.6140
  • 100:$0.3960
  • 1000:$0.3170
  • 3000:$0.2680
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109
DISTI # 1324787RL		ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant		0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # 1324787		ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant		0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # C1S541901518927		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R
RoHS: Compliant		1923
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von FDFMA3N109 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,74 $
0,74 $
10
0,61 $
6,14 $
100
0,40 $
39,60 $
1000
0,32 $
317,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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