IGO60R070D1AUMA1

IGO60R070D1AUMA1
Mfr. #:
IGO60R070D1AUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 600V CoolGaN Power Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGO60R070D1AUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGO60R070D1AUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN
Montageart:
SMD/SMT
Paket / Koffer:
PG-DSO-20
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
70 mOhms
Vgs th - Gate-Source-Schwellenspannung:
0.9 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
5.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolGaN
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SP001300362
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
Teil # Mfg. Beschreibung Aktie Preis
IGO60R070D1AUMA1
DISTI # V72:2272_22710690
Infineon Technologies AGIGO60R070D1AUMA10
    IGO60R070D1AUMA1
    DISTI # V36:1790_22710690
    Infineon Technologies AGIGO60R070D1AUMA10
    • 400000:$13.6900
    • 80000:$14.6300
    • 8000:$16.6600
    • 800:$17.0200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1CT-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1DKR-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1TR-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 800:$17.0240
    IGO60R070D1AUMA1
    DISTI # SP001300362
    Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 100
    • 8000:€13.6900
    • 4800:€14.2900
    • 3200:€15.0900
    • 1600:€15.2900
    • 800:€15.6900
    IGO60R070D1AUMA1/SAMPLE
    DISTI # IGO60R070D1AUMA1/SAMPLE
    Infineon Technologies AGTransistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray
    Americas - 5
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1
      Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel
      Americas - 0
      • 8000:$14.8900
      • 4800:$15.0900
      • 3200:$15.6900
      • 1600:$16.2900
      • 800:$16.8900
      IGO60R070D1AUMA1
      DISTI # 84AC1770
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes974
      • 500:$16.3800
      • 250:$17.2100
      • 100:$18.0400
      • 50:$19.1100
      • 25:$20.1800
      • 10:$21.1300
      • 1:$22.9100
      IGO60R070D1AUMA1
      DISTI # 726-IGO60R070D1AUMA1
      Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
      RoHS: Compliant
      0
      • 1:$22.6800
      • 5:$22.4400
      • 10:$20.9200
      • 25:$19.9800
      • 100:$17.8600
      • 250:$17.0400
      • 500:$16.2200
      • 800:$14.1000
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1
      Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
      • 10:$22.5500
      • 3:$25.5900
      • 1:$28.4100
      IGO60R070D1AUMA1
      DISTI # 2981531
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
      RoHS: Compliant
      974
      • 800:$23.5100
      • 500:$26.0500
      • 100:$26.9300
      • 50:$29.3700
      • 1:$32.3000
      • 10:$32.3000
      IGO60R070D1AUMA1
      DISTI # 2981531
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W954
      • 100:£13.0800
      • 50:£13.8600
      • 10:£14.6300
      • 5:£16.4300
      • 1:£16.6000
      Bild Teil # Beschreibung
      IGT60R070D1ATMA1

      Mfr.#: IGT60R070D1ATMA1

      OMO.#: OMO-IGT60R070D1ATMA1

      MOSFET 600V CoolGaN Power Transistor
      IGT60R190D1SATMA1

      Mfr.#: IGT60R190D1SATMA1

      OMO.#: OMO-IGT60R190D1SATMA1

      MOSFET 600V CoolGaN Power Transistor
      IGOT60R070D1AUMA1

      Mfr.#: IGOT60R070D1AUMA1

      OMO.#: OMO-IGOT60R070D1AUMA1

      MOSFET 600V CoolGaN Power Transistor
      IGLD60R070D1AUMA1

      Mfr.#: IGLD60R070D1AUMA1

      OMO.#: OMO-IGLD60R070D1AUMA1

      MOSFET 600V CoolGaN Power Transistor
      LMG1020YFFR

      Mfr.#: LMG1020YFFR

      OMO.#: OMO-LMG1020YFFR

      Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
      LMG3410R070RWHT

      Mfr.#: LMG3410R070RWHT

      OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS

      PWR MGMT MOSFET/PWR DRIVER
      1EDF5673FXUMA1

      Mfr.#: 1EDF5673FXUMA1

      OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

      IC DRIVER IC GAN DSO-16-11
      1EDS5663HXUMA1

      Mfr.#: 1EDS5663HXUMA1

      OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

      IC DRIVER IC GAN DSO-16
      LMG3411R070RWHT

      Mfr.#: LMG3411R070RWHT

      OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

      600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
      IGOT60R070D1AUMA1

      Mfr.#: IGOT60R070D1AUMA1

      OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES

      IC GAN FET 600V 60A 20DSO
      Verfügbarkeit
      Aktie:
      703
      Auf Bestellung:
      2686
      Menge eingeben:
      Der aktuelle Preis von IGO60R070D1AUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      22,68 $
      22,68 $
      5
      22,44 $
      112,20 $
      10
      20,92 $
      209,20 $
      25
      19,98 $
      499,50 $
      100
      17,86 $
      1 786,00 $
      250
      17,04 $
      4 260,00 $
      500
      16,22 $
      8 110,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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