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IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
Mfr. #:
IGOT60R070D1AUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 600V CoolGaN Power Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGOT60R070D1AUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGOT60R070D1AUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN
Montageart:
SMD/SMT
Paket / Koffer:
PG-DSO-20
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
70 mOhms
Vgs th - Gate-Source-Schwellenspannung:
0.9 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
5.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Kanalmodus:
Erweiterung
Handelsname:
CoolGaN
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SP001505772
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
Teil # Mfg. Beschreibung Aktie Preis
IGOT60R070D1AUMA1
DISTI # V72:2272_22710691		Infineon Technologies AGIGOT60R070D1AUMA1293
  • 75000:$15.6200
  • 30000:$15.7200
  • 15000:$15.8200
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$17.0240
IGOT60R070D1AUMA1
DISTI # 32907523		Infineon Technologies AGIGOT60R070D1AUMA1293
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 60A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGOT60R070D1AUMA1)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$14.8900
  • 4800:$15.0900
  • 3200:$15.6900
  • 1600:$16.2900
  • 800:$16.8900
IGOT60R070D1AUMA1
DISTI # 84AC1769		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes87
  • 500:$16.3800
  • 250:$17.2100
  • 100:$18.0400
  • 50:$19.1100
  • 25:$20.1800
  • 10:$21.1300
  • 1:$22.9100
IGOT60R070D1AUMA1
DISTI # 726-IGOT60R070D1AUMA		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant		468
  • 1:$22.6800
  • 5:$22.4400
  • 10:$20.9200
  • 25:$19.9800
  • 100:$17.8600
  • 250:$17.0400
  • 500:$16.2200
  • 800:$14.1000
IGOT60R070D1AUMA1
DISTI # 2981533		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W87
  • 100:£13.0800
  • 50:£13.8600
  • 10:£14.6300
  • 5:£16.4300
  • 1:£16.6000
IGOT60R070D1AUMA1
DISTI # 2981533		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
RoHS: Compliant		87
  • 800:$22.9000
  • 500:$26.0500
  • 100:$26.9300
  • 50:$29.3700
  • 1:$32.3000
  • 10:$32.3000
Bild Teil # Beschreibung
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148

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IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1

 MOSFET 600V CoolGaN Power Transistor
IGT60R190D1SATMA1

Mfr.#: IGT60R190D1SATMA1

OMO.#: OMO-IGT60R190D1SATMA1

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IGO60R070D1AUMA1

Mfr.#: IGO60R070D1AUMA1

OMO.#: OMO-IGO60R070D1AUMA1

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IGLD60R070D1AUMA1

Mfr.#: IGLD60R070D1AUMA1

OMO.#: OMO-IGLD60R070D1AUMA1

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PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

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GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
ACPL-P346-000E

Mfr.#: ACPL-P346-000E

OMO.#: OMO-ACPL-P346-000E

 Logic Output Optocouplers OPTOCOUPLER GATE DRV, LF
1EDF5673FXUMA1

Mfr.#: 1EDF5673FXUMA1

OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

 IC DRIVER IC GAN DSO-16-11
1EDS5663HXUMA1

Mfr.#: 1EDS5663HXUMA1

OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

 IC DRIVER IC GAN DSO-16
Verfügbarkeit
Aktie:
464
Auf Bestellung:
2447
Menge eingeben:
Der aktuelle Preis von IGOT60R070D1AUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
22,68 $
22,68 $
5
22,44 $
112,20 $
10
20,92 $
209,20 $
25
19,98 $
499,50 $
100
17,86 $
1 786,00 $
250
17,04 $
4 260,00 $
500
16,22 $
8 110,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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