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IGT60R190D1SATMA1

IGT60R190D1SATMA1
Mfr. #:
IGT60R190D1SATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 600V CoolGaN Power Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGT60R190D1SATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGT60R190D1SATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN
Montageart:
SMD/SMT
Paket / Koffer:
PG-HSOF-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
12.5 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
0.9 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
3.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
55.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolGaN
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
SP001701702
Tags
IGT60, IGT6, IGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
Teil # Mfg. Beschreibung Aktie Preis
IGT60R190D1SATMA1
DISTI # V72:2272_22710693		Infineon Technologies AGIGT60R190D1SATMA14055
  • 3000:$8.2850
  • 1000:$8.6090
  • 500:$8.9330
  • 250:$9.2560
  • 100:$10.1350
  • 25:$11.4900
  • 10:$11.8430
  • 1:$13.0200
IGT60R190D1SATMA1
DISTI # V36:1790_22710693		Infineon Technologies AGIGT60R190D1SATMA10
  • 2000000:$7.2580
  • 1000000:$7.2610
  • 200000:$7.6100
  • 20000:$8.2630
  • 2000:$8.3740
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 23A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		510In Stock
  • 1000:$8.9618
  • 500:$9.7704
  • 100:$10.9832
  • 10:$13.0050
  • 1:$14.1500
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 23A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		510In Stock
  • 1000:$8.9618
  • 500:$9.7704
  • 100:$10.9832
  • 10:$13.0050
  • 1:$14.1500
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 23A 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$8.3737
IGT60R190D1SATMA1
DISTI # 32361396		Infineon Technologies AGIGT60R190D1SATMA14055
  • 3000:$8.2850
  • 1000:$8.6090
  • 500:$8.9330
  • 250:$9.2560
  • 100:$10.1350
  • 25:$11.4900
  • 10:$11.8430
  • 1:$13.0200
IGT60R190D1SATMA1
DISTI # SP001701702		Infineon Technologies AGGAN HV (Alt: SP001701702)
RoHS: Compliant
Min Qty: 2000		Europe - 100
  • 20000:€6.8900
  • 12000:€7.3900
  • 8000:€7.8900
  • 4000:€8.2900
  • 2000:€8.5900
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1		Infineon Technologies AGGAN HV - Tape and Reel (Alt: IGT60R190D1SATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$7.8900
  • 12000:$7.9900
  • 8000:$8.2900
  • 4000:$8.5900
  • 2000:$8.8900
IGT60R190D1SATMA1
DISTI # 84AC1772		Infineon Technologies AGMOSFET, N-CH, 600V, 12.5A, 55.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes2158
  • 1000:$8.3700
  • 500:$9.1300
  • 250:$9.7600
  • 100:$10.2600
  • 50:$10.9500
  • 25:$11.6500
  • 10:$12.1500
  • 1:$13.2100
IGT60R190D1SATMA1
DISTI # 726-IGT60R190D1SATMA		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant		2156
  • 1:$13.0800
  • 10:$12.0300
  • 25:$11.5300
  • 100:$10.1600
  • 250:$9.6600
  • 500:$9.0400
  • 1000:$8.2900
  • 2000:$7.4800
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1		Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,12.5A,Idm:23A,55.5W7
  • 10:$12.2900
  • 3:$13.8700
  • 1:$15.4400
IGT60R190D1SATMA1
DISTI # 2981534		Infineon Technologies AGMOSFET, N-CH, 600V, 12.5A, 55.5W658
  • 100:£7.3600
  • 50:£7.8600
  • 10:£8.3600
  • 5:£9.4800
  • 1:£9.9600
IGT60R190D1SATMA1
DISTI # 2981534		Infineon Technologies AGMOSFET, N-CH, 600V, 12.5A, 55.5W
RoHS: Compliant		658
  • 250:$12.4700
  • 100:$14.7600
  • 50:$15.9000
  • 10:$16.9800
  • 5:$19.2200
  • 1:$21.0400
Bild Teil # Beschreibung
IGT60R070D1ATMA1

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OMO.#: OMO-IGT60R070D1ATMA1

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IGO60R070D1AUMA1

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OMO.#: OMO-IGO60R070D1AUMA1

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IGOT60R070D1AUMA1

Mfr.#: IGOT60R070D1AUMA1

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IGT60R190D1SATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
13,08 $
13,08 $
10
12,03 $
120,30 $
25
11,53 $
288,25 $
100
10,16 $
1 016,00 $
250
9,66 $
2 415,00 $
500
9,04 $
4 520,00 $
1000
8,29 $
8 290,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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