STGWT80H65FB

STGWT80H65FB
Mfr. #:
STGWT80H65FB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT80H65FB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT80H65FB Mehr Informationen STGWT80H65FB Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3P
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
120 A
Pd - Verlustleistung:
469 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGWT80H65FB
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
300
Unterkategorie:
IGBTs
Gewichtseinheit:
0.238311 oz
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 80A TO-3P
***i-Key
IGBT 650V 120A 469W TO3P-3L
***ark
Ptd High Voltage
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGWT80H65FB
DISTI # 497-15141-5-ND
STMicroelectronicsIGBT 650V 120A 469W TO3P-3L
RoHS: Compliant
Min Qty: 1
Container: Tube
295In Stock
  • 1020:$7.2800
  • 510:$7.9170
  • 120:$8.8998
  • 30:$10.1010
  • 1:$11.4700
STGWT80H65FB
DISTI # STGWT80H65FB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65FB)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€4.7900
  • 10:€4.3900
  • 25:€4.1900
  • 50:€3.9900
  • 100:€3.8900
  • 500:€3.6900
  • 1000:€3.4900
STGWT80H65FB
DISTI # STGWT80H65FB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65FB)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 300:$7.6900
  • 360:$7.3900
  • 660:$6.9900
  • 1500:$6.6900
  • 3000:$6.5900
STGWT80H65FB
DISTI # 26Y5808
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$6.5000
STGWT80H65FB
DISTI # 511-STGWT80H65FB
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
RoHS: Compliant
0
  • 1:$10.9100
  • 10:$10.0300
  • 25:$9.6200
  • 100:$8.4700
  • 250:$8.0600
  • 500:$7.5400
  • 1000:$6.9100
STGWT80H65FB
DISTI # 8297145P
STMicroelectronicsIGBT TRENCH HB SERIES 650V 80A TO-3P, TU67
  • 20:£4.3900
  • 10:£4.9600
STGWT80H65FBSTMicroelectronics 299
    Bild Teil # Beschreibung
    STGWT80H65DFB

    Mfr.#: STGWT80H65DFB

    OMO.#: OMO-STGWT80H65DFB

    IGBT Transistors Trench gate H series 650V 80A HiSpd
    STGWT80V60F

    Mfr.#: STGWT80V60F

    OMO.#: OMO-STGWT80V60F

    IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
    STGWT80V60DF

    Mfr.#: STGWT80V60DF

    OMO.#: OMO-STGWT80V60DF

    IGBT Transistors Trench gte FieldStop IGBT 600V 80A
    STGWT80H65FB

    Mfr.#: STGWT80H65FB

    OMO.#: OMO-STGWT80H65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGWT80V60DF

    Mfr.#: STGWT80V60DF

    OMO.#: OMO-STGWT80V60DF-STMICROELECTRONICS

    IGBT Transistors Trench gte FieldStop IGBT 600V 80A
    STGWT80H65DFB

    Mfr.#: STGWT80H65DFB

    OMO.#: OMO-STGWT80H65DFB-STMICROELECTRONICS

    IGBT 650V 120A 469W TO3P-3L
    STGWT80V60F

    Mfr.#: STGWT80V60F

    OMO.#: OMO-STGWT80V60F-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGWT80H65FB

    Mfr.#: STGWT80H65FB

    OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von STGWT80H65FB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    10,91 $
    10,91 $
    10
    10,03 $
    100,30 $
    25
    9,62 $
    240,50 $
    100
    8,47 $
    847,00 $
    250
    8,06 $
    2 015,00 $
    500
    7,54 $
    3 770,00 $
    1000
    6,91 $
    6 910,00 $
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