STGWT80H65DFB

STGWT80H65DFB
Mfr. #:
STGWT80H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT 650V 120A 469W TO3P-3L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT80H65DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT80H65DFB Mehr Informationen STGWT80H65DFB Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
600-650V IGBTs
Verpackung
Rohr
Gewichtseinheit
0.238311 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3P
Aufbau
Single
Leistung max
469W
Reverse-Recovery-Time-trr
85ns
Strom-Kollektor-Ic-Max
120A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
Schaltenergie
2.1mJ (on), 1.5mJ (off)
Gate-Gebühr
414nC
Td-ein-aus-25°C
84ns/280ns
Testbedingung
400V, 80A, 10 Ohm, 15V
Pd-Verlustleistung
469 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.6 V
Kontinuierlicher Kollektorstrom-bei-25-C
120 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
80 A
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***va Crawler
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
***Components
In a Tube of 30, STMicroelectronics STGWT80H65DFB IGBT
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 80A TO-3P
***nell
IGBT, SINGLE, 650V, 120A, TO-3P
***i-Key
IGBT 650V 120A 469W TO3P-3L
***ark
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGWT80H65DFB
DISTI # 32924310
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
300
  • 200:$3.7485
  • 50:$3.9780
  • 10:$4.1182
  • 3:$9.0780
STGWT80H65DFB
DISTI # 497-14234-5-ND
STMicroelectronicsIGBT 650V 120A 469W TO3P-3L
RoHS: Compliant
Min Qty: 1
Container: Tube
8In Stock
  • 510:$4.8825
  • 120:$5.6070
  • 30:$6.4577
  • 10:$6.7730
  • 1:$7.5000
STGWT80H65DFB
DISTI # STGWT80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGWT80H65DFB
DISTI # STGWT80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 3000:$3.7900
  • 1800:$3.8900
  • 1200:$3.9900
  • 600:$4.1900
  • 300:$4.3900
STGWT80H65DFB
DISTI # 45AC7598
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes71
  • 250:$5.1500
  • 100:$5.3900
  • 50:$5.8000
  • 25:$6.2100
  • 10:$6.5100
  • 1:$7.2000
STGWT80H65DFB
DISTI # 511-STGWT80H65DFB
STMicroelectronicsIGBT Transistors Trench gate H series 650V 80A HiSpd
RoHS: Compliant
193
  • 1:$7.1300
  • 10:$6.4500
  • 25:$6.1500
  • 100:$5.3400
  • 250:$5.1000
STGWT80H65DFB
DISTI # 8297136P
STMicroelectronicsIGBT TRENCH HB SERIES 650V 80A TO-3P, TU184
  • 10:£2.9500
STGWT80H65DFB
DISTI # 2807181
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P
RoHS: Compliant
222
  • 1020:$6.4500
  • 510:$7.4100
  • 120:$8.5000
  • 30:$9.7900
  • 1:$11.3700
STGWT80H65DFB
DISTI # 2807181
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P222
  • 100:£3.9100
  • 50:£4.2100
  • 10:£4.5000
  • 5:£5.2200
  • 1:£5.7200
Bild Teil # Beschreibung
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB

IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF-STMICROELECTRONICS

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB-STMICROELECTRONICS

IGBT 650V 120A 469W TO3P-3L
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von STGWT80H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,62 $
5,62 $
10
5,34 $
53,42 $
100
5,06 $
506,05 $
500
4,78 $
2 389,65 $
1000
4,50 $
4 498,20 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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