STGWT80V60F

STGWT80V60F
Mfr. #:
STGWT80V60F
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors IGBT & Power Bipola
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT80V60F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT80V60F Mehr Informationen STGWT80V60F Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
600-650V IGBTs
Verpackung
Rohr
Gewichtseinheit
0.238311 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3P
Aufbau
Single
Leistung max
469W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
120A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
240A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 80A
Schaltenergie
1.8mJ (on), 1mJ (off)
Gate-Gebühr
448nC
Td-ein-aus-25°C
60ns/220ns
Testbedingung
400V, 80A, 10 Ohm, 15V
Pd-Verlustleistung
469 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
1.85 V
Kontinuierlicher Kollektorstrom-bei-25-C
120 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
80 A
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Teil # Mfg. Beschreibung Aktie Preis
STGWT80V60F
DISTI # 497-15142-5-ND
STMicroelectronicsIGBT 600V 120A 469W TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube
Temporarily Out of Stock
    STGWT80V60F
    DISTI # STGWT80V60F
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube (Alt: STGWT80V60F)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€3.7900
    • 100:€3.8900
    • 500:€3.8900
    • 50:€3.9900
    • 25:€4.0900
    • 10:€4.1900
    • 1:€4.3900
    STGWT80V60F
    DISTI # STGWT80V60F
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80V60F)
    RoHS: Compliant
    Min Qty: 300
    Container: Tube
    Americas - 0
    • 3000:$6.0900
    • 1800:$6.1900
    • 1200:$6.4900
    • 600:$6.7900
    • 300:$7.0900
    STGWT80V60F
    DISTI # 26Y5809
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$6.2400
    • 250:$6.4400
    • 100:$7.6800
    • 50:$8.2600
    • 25:$8.8400
    • 10:$9.7000
    • 1:$10.8000
    STGWT80V60F
    DISTI # 511-STGWT80V60F
    STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
    RoHS: Compliant
    285
    • 1:$11.4100
    • 10:$10.3200
    • 25:$9.8400
    • 100:$8.5400
    • 250:$8.1600
    • 500:$7.4400
    • 1000:$6.4800
    Bild Teil # Beschreibung
    STGWT80H65DFB

    Mfr.#: STGWT80H65DFB

    OMO.#: OMO-STGWT80H65DFB

    IGBT Transistors Trench gate H series 650V 80A HiSpd
    STGWT20V60DF

    Mfr.#: STGWT20V60DF

    OMO.#: OMO-STGWT20V60DF

    IGBT Transistors 600V 20A High Speed Trench Gate IGBT
    STGWT40H65DFB

    Mfr.#: STGWT40H65DFB

    OMO.#: OMO-STGWT40H65DFB

    IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
    STGWT80V60F

    Mfr.#: STGWT80V60F

    OMO.#: OMO-STGWT80V60F

    IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
    STGWT80H65FB

    Mfr.#: STGWT80H65FB

    OMO.#: OMO-STGWT80H65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGWT40H65FB

    Mfr.#: STGWT40H65FB

    OMO.#: OMO-STGWT40H65FB

    IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
    STGWT30V60DF

    Mfr.#: STGWT30V60DF

    OMO.#: OMO-STGWT30V60DF-STMICROELECTRONICS

    IGBT Transistors 600V 30A High Speed Trench Gate IGBT
    STGWT40H65DFB

    Mfr.#: STGWT40H65DFB

    OMO.#: OMO-STGWT40H65DFB-STMICROELECTRONICS

    IGBT 650V 80A 283W TO3P-3L
    STGWT40H60DLFB

    Mfr.#: STGWT40H60DLFB

    OMO.#: OMO-STGWT40H60DLFB-STMICROELECTRONICS

    IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
    STGWT60H65DFB

    Mfr.#: STGWT60H65DFB

    OMO.#: OMO-STGWT60H65DFB-STMICROELECTRONICS

    IGBT 650V 80A 375W TO3P-3L
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von STGWT80V60F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,46 $
    6,46 $
    10
    6,14 $
    61,37 $
    100
    5,81 $
    581,42 $
    500
    5,49 $
    2 745,60 $
    1000
    5,17 $
    5 168,20 $
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