IPP062NE7N3G

IPP062NE7N3G
Mfr. #:
IPP062NE7N3G
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP062NE7N3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPP062, IPP06, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 75V 80A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.2896
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R - Bulk (Alt: IPP062NE7N3GXKSA1)
RoHS: Compliant
Min Qty: 397
Container: Bulk
Americas - 0
  • 3970:$0.7999
  • 1985:$0.8149
  • 1191:$0.8429
  • 794:$0.8749
  • 397:$0.9069
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: IPP062NE7N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$0.8909
  • 3000:$0.9069
  • 2000:$0.9389
  • 1000:$0.9739
  • 500:$1.0109
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3 G
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R (Alt: IPP062NE7N3 G)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Asia - 0
  • 25000:$0.8883
  • 12500:$0.8997
  • 5000:$0.9114
  • 2500:$0.9234
  • 1500:$0.9484
  • 1000:$0.9747
  • 500:$1.0026
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3G
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R - Bulk (Alt: IPP062NE7N3G)
RoHS: Compliant
Min Qty: 391
Container: Bulk
Americas - 0
  • 3910:$0.8889
  • 1955:$0.9049
  • 1173:$0.9369
  • 782:$0.9719
  • 391:$1.0079
IPP062NE7N3GXKSA1
DISTI # SP000819768
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R (Alt: SP000819768)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel
Europe - 0
  • 500:€0.7629
  • 300:€0.8179
  • 200:€0.8799
  • 100:€0.9539
  • 50:€1.1449
IPP062NE7N3 G
DISTI # 726-IPP062NE7N3G
Infineon Technologies AGMOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
RoHS: Compliant
976
  • 1:$2.0600
  • 10:$1.7500
  • 100:$1.4000
  • 500:$1.2200
  • 1000:$1.0100
  • 2500:$0.9480
  • 5000:$0.9130
IPP062NE7N3GHKSA1
DISTI # 726-IPP062NE7N3GHKSA
Infineon Technologies AGMOSFET N-Ch 75V 80A TO220-3
RoHS: Compliant
0
    IPP062NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    276
    • 1000:$0.9200
    • 500:$0.9700
    • 100:$1.0100
    • 25:$1.0500
    • 1:$1.1300
    IPP062NE7N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    500
    • 1000:$0.8300
    • 500:$0.8700
    • 100:$0.9100
    • 25:$0.9500
    • 1:$1.0200
    Bild Teil # Beschreibung
    IPP062NE7N3 G

    Mfr.#: IPP062NE7N3 G

    OMO.#: OMO-IPP062NE7N3-G

    MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
    IPP062NE7N3GXKSA1

    Mfr.#: IPP062NE7N3GXKSA1

    OMO.#: OMO-IPP062NE7N3GXKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 75V 80A TO220-3
    IPP062NE7N3GHKSA1

    Mfr.#: IPP062NE7N3GHKSA1

    OMO.#: OMO-IPP062NE7N3GHKSA1-1190

    MOSFET N-Ch 75V 80A TO220-3
    IPP062NE7N3G

    Mfr.#: IPP062NE7N3G

    OMO.#: OMO-IPP062NE7N3G-1190

    Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPP062NE7N3G 062NE7N

    Mfr.#: IPP062NE7N3G 062NE7N

    OMO.#: OMO-IPP062NE7N3G-062NE7N-1190

    Neu und Original
    IPP062NE7N3 G

    Mfr.#: IPP062NE7N3 G

    OMO.#: OMO-IPP062NE7N3-G-124

    Darlington Transistors MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IPP062NE7N3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,26 $
    1,26 $
    10
    1,20 $
    11,97 $
    100
    1,13 $
    113,40 $
    500
    1,07 $
    535,50 $
    1000
    1,01 $
    1 008,00 $
    Beginnen mit
    Neueste Produkte
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top