IPP062NE7N3 G

IPP062NE7N3 G
Mfr. #:
IPP062NE7N3 G
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP062NE7N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Rohr
Teil-Aliasnamen
IPP062NE7N3GXK IPP062NE7N3GXKSA1 SP000819768
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Handelsname
OptiMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
136 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
48 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Rds-On-Drain-Source-Widerstand
6.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
24 nS
Qg-Gate-Ladung
42 nC
Tags
IPP062, IPP06, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 75V 80A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.3510
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: IPP062NE7N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.0109
  • 1000:$0.9739
  • 2000:$0.9389
  • 3000:$0.9069
  • 5000:$0.8909
IPP062NE7N3GXKSA1
DISTI # IPP062NE7N3 G
Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R (Alt: IPP062NE7N3 G)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Asia - 0
    IPP062NE7N3GXKSA1
    DISTI # SP000819768
    Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 T/R (Alt: SP000819768)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 0
    • 1:€1.1449
    • 10:€1.0405
    • 25:€0.9539
    • 50:€0.9159
    • 100:€0.8799
    • 500:€0.8479
    • 1000:€0.8179
    IPP062NE7N3 G
    DISTI # 726-IPP062NE7N3G
    Infineon Technologies AGMOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
    RoHS: Compliant
    1346
    • 1:$2.0700
    • 10:$1.7600
    • 100:$1.4100
    • 500:$1.2300
    • 1000:$1.0200
    IPP062NE7N3GHKSA1
    DISTI # 726-IPP062NE7N3GHKSA
    Infineon Technologies AGMOSFET N-Ch 75V 80A TO220-3
    RoHS: Compliant
    0
      IPP062NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      276
      • 1000:$0.8400
      • 500:$0.8900
      • 100:$0.9200
      • 25:$0.9600
      • 1:$1.0400
      IPP062NE7N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      500
      • 1000:$0.7900
      • 500:$0.8300
      • 100:$0.8700
      • 25:$0.9000
      • 1:$0.9700
      Bild Teil # Beschreibung
      IPP062NE7N3 G

      Mfr.#: IPP062NE7N3 G

      OMO.#: OMO-IPP062NE7N3-G

      MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
      IPP062NE7N3GXKSA1

      Mfr.#: IPP062NE7N3GXKSA1

      OMO.#: OMO-IPP062NE7N3GXKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 75V 80A TO220-3
      IPP062NE7N3GHKSA1

      Mfr.#: IPP062NE7N3GHKSA1

      OMO.#: OMO-IPP062NE7N3GHKSA1-1190

      MOSFET N-Ch 75V 80A TO220-3
      IPP062NE7N3G

      Mfr.#: IPP062NE7N3G

      OMO.#: OMO-IPP062NE7N3G-1190

      Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      IPP062NE7N3G 062NE7N

      Mfr.#: IPP062NE7N3G 062NE7N

      OMO.#: OMO-IPP062NE7N3G-062NE7N-1190

      Neu und Original
      IPP062NE7N3 G

      Mfr.#: IPP062NE7N3 G

      OMO.#: OMO-IPP062NE7N3-G-124

      Darlington Transistors MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IPP062NE7N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,37 $
      1,37 $
      10
      1,30 $
      13,01 $
      100
      1,23 $
      123,26 $
      500
      1,16 $
      582,05 $
      1000
      1,10 $
      1 095,60 $
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