IPP062

IPP062NE7N3 G vs IPP062NE7N3G vs IPP062NE7N3G 062NE7N

 
PartNumberIPP062NE7N3 GIPP062NE7N3GIPP062NE7N3G 062NE7N
DescriptionMOSFET N-Ch 75V 80A TO220-3 OptiMOS 3Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance6.2 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge42 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time48 nS--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 nS--
Part # AliasesIPP062NE7N3GXKSA1 IPP62NE7N3GXK SP000819768--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
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