SI4931DY-T1-GE3

Mfr. #:: SI4931DY-T1-GE3
Hersteller:: Vishay
Beschreibung:: IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4931DY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI4931DY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: IC-Chips

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI4931DY-GE3

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Dual

FET-Typ: 2 P-Channel (Dual)

Leistung max: 1.1W

Transistor-Typ: 2 P-Channel

Drain-zu-Source-Spannung-Vdss: 12V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 6.7A

Rds-On-Max-Id-Vgs: 18 mOhm @ 8.9A, 4.5V

Vgs-th-Max-Id: 1V @ 350μA

Gate-Lade-Qg-Vgs: 52nC @ 4.5V

Pd-Verlustleistung: 1.1 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 155 ns

Anstiegszeit: 46 ns

Vgs-Gate-Source-Spannung: 8 V

ID-Dauer-Drain-Strom: 6.7 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Rds-On-Drain-Source-Widerstand: 18 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 230 ns

Typische-Einschaltverzögerungszeit: 25 ns

Kanal-Modus: Erweiterung

Tags: SI4931DY-T, SI4931, SI493, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4931DY-T1-GE3 Beschreibung

***ure Electronics: DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE

***ical: Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R

***ark: Dual P-Channel 12-V (D-S) Mosfet

SI4931DY-T1-GE3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4931DY-T1-GE3 DISTI # V72:2272_09216664	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant	600	500:$0.6798 250:$0.7742 100:$0.7825 25:$0.9702 10:$0.9815 1:$1.1463
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	26020In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	26020In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	22500In Stock	2500:$0.4500
SI4931DY-T1-GE3 DISTI # 31041114	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant	600	500:$0.6798 250:$0.7742 100:$0.7825 25:$0.9702 13:$0.9815
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$2.5240 5000:$1.9415 7500:$1.5453 12500:$1.3055 25000:$1.2019 62500:$1.1649 125000:$1.1301
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5999 5000:$0.5819 10000:$0.5579 15000:$0.5429 25000:$0.5279
SI4931DY-T1-GE3 DISTI # 15R5125	Vishay Intertechnologies	DUAL P-CHANNEL 12-V (D-S) MOSFET	0	1:$0.8410 1000:$0.8070 2000:$0.7340 4000:$0.6600 6000:$0.6360 10000:$0.6210
SI4931DY-T1-GE3 DISTI # 781-SI4931DY-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant	7375	1:$1.4500 10:$1.1900 100:$0.9110 500:$0.7840 1000:$0.6190 2500:$0.5780
SI4931DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 560
SI4931DY-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant	Americas -
SI4931DY-T1-GE3 DISTI # C1S803601969446	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant	600	250:$0.7742 100:$0.7825 25:$0.9702 10:$0.9815

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI4931DY-T1-E3 OMO.#: OMO-SI4931DY-T1-E3	MOSFET -12V Vds 8V Vgs SO-8
	Mfr.#: SI4931DY-T1-GE3 OMO.#: OMO-SI4931DY-T1-GE3	MOSFET -12V Vds 8V Vgs SO-8
	Mfr.#: SI4931DY-T1-GE3 OMO.#: OMO-SI4931DY-T1-GE3-VISHAY	IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
	Mfr.#: SI4931DY-T1-E3-CUT TAPE OMO.#: OMO-SI4931DY-T1-E3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SI4931DY OMO.#: OMO-SI4931DY-1190	Neu und Original
	Mfr.#: SI4931DY-E3 OMO.#: OMO-SI4931DY-E3-1190	Neu und Original
	Mfr.#: SI4931DY-T1-E3 OMO.#: OMO-SI4931DY-T1-E3-VISHAY	MOSFET 2P-CH 12V 6.7A 8-SOIC
	Mfr.#: SI4931DY-T1GE3 OMO.#: OMO-SI4931DY-T1GE3-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SI4931DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,68 $~~; ~~0,68 $~~

10: ~~0,64 $~~; ~~6,41 $~~

100: ~~0,61 $~~; ~~60,75 $~~

500: ~~0,57 $~~; ~~286,85 $~~

1000: ~~0,54 $~~; ~~540,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI4931DY-T 4
SI4931 6
SI493 50
SI49 329
SI4 2994

SI4931DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes