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SIHP6N40D-E3

SIHP6N40D-E3
Mfr. #:
SIHP6N40D-E3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP6N40D-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHP6N40D-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHP6N4, SIHP6N, SIHP6, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHP6N40D-E3
DISTI # SIHP6N40D-E3-ND		Vishay SiliconixMOSFET N-CH 400V 6A TO-220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.7633
SIHP6N40D-E3
DISTI # SIHP6N40D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP6N40D-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.6729
  • 2000:$0.6529
  • 4000:$0.6259
  • 6000:$0.6089
  • 10000:$0.5929
SIHP6N40D-E3
DISTI # 99W9511		Vishay IntertechnologiesMOSFET, N CHANNEL, 400V, 6A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:400V,On Resistance Rds(on):0.85ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes0
  • 1:$1.6200
  • 10:$1.2600
  • 25:$1.1500
  • 50:$1.0400
  • 100:$0.9210
  • 500:$0.8050
  • 1000:$0.6940
  • 2500:$0.6390
SIHP6N40D-E3
DISTI # 78-SIHP6N40D-E3		Vishay IntertechnologiesMOSFET 400V Vds 30V Vgs TO-220AB
RoHS: Compliant		968
  • 1:$1.6200
  • 10:$1.3400
  • 100:$1.0300
  • 500:$0.8790
  • 1000:$0.6940
  • 2500:$0.6480
  • 5000:$0.6160
  • 10000:$0.6010
Bild Teil # Beschreibung
SIHP6N80E-GE3

Mfr.#: SIHP6N80E-GE3

OMO.#: OMO-SIHP6N80E-GE3

 MOSFET 800V Vds 30V Vgs TO-220AB
SIHP6N40D-GE3

Mfr.#: SIHP6N40D-GE3

OMO.#: OMO-SIHP6N40D-GE3

 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP6N40D-E3

Mfr.#: SIHP6N40D-E3

OMO.#: OMO-SIHP6N40D-E3

 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP6N65E-GE3

Mfr.#: SIHP6N65E-GE3

OMO.#: OMO-SIHP6N65E-GE3

 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP6N65E-GE3

Mfr.#: SIHP6N65E-GE3

OMO.#: OMO-SIHP6N65E-GE3-VISHAY

 IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHP6N40D-GE3

Mfr.#: SIHP6N40D-GE3

OMO.#: OMO-SIHP6N40D-GE3-VISHAY

 IGBT Transistors MOSFET N-CHANNEL 400V
SIHP6N40D-E3

Mfr.#: SIHP6N40D-E3

OMO.#: OMO-SIHP6N40D-E3-VISHAY

 RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
SIHP6N40D

Mfr.#: SIHP6N40D

OMO.#: OMO-SIHP6N40D-1190

 Neu und Original
SIHP6N80E-GE3

Mfr.#: SIHP6N80E-GE3

OMO.#: OMO-SIHP6N80E-GE3-VISHAY

 MOSFET N-CHAN 800V TO-220AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von SIHP6N40D-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,89 $
0,89 $
10
0,84 $
8,45 $
100
0,80 $
80,04 $
500
0,76 $
377,95 $
1000
0,71 $
711,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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