SIHP6N65E-GE3

SIHP6N65E-GE3
Mfr. #:
SIHP6N65E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP6N65E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP6N65E-GE3 DatasheetSIHP6N65E-GE3 Datasheet (P4-P6)SIHP6N65E-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHP6N65E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
600 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
24 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.49 mm
Länge:
10.41 mm
Serie:
E
Breite:
4.7 mm
Marke:
Vishay / Siliconix
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
0.211644 oz
Tags
SIHP6N, SIHP6, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin TO-220AB T/R
***ure Electronics
E Series N Channel 700 V 0.6 O 48 nC Flange Mount Power Mosfet - TO-220AB
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP6N65E-GE3
DISTI # SIHP6N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 7A TO220AB
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.0150
SIHP6N65E-GE3
DISTI # SIHP6N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin TO-220AB T/R - Tape and Reel (Alt: SIHP6N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8969
  • 6000:$0.9219
  • 4000:$0.9479
  • 2000:$0.9879
  • 1000:$1.0179
SIHP6N65E-GE3
DISTI # SIHP6N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin TO-220AB T/R (Alt: SIHP6N65E-GE3)
Min Qty: 1
Container: Tape and Reel
Europe - 0
    SIHP6N65E-GE3
    DISTI # 78-SIHP6N65E-GE3
    Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    0
    • 1:$2.1700
    • 10:$1.8000
    • 100:$1.4000
    • 500:$1.2200
    • 1000:$1.0000
    • 2500:$0.9450
    • 5000:$0.9100
    SIHP6N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    Americas -
      Bild Teil # Beschreibung
      SIHP6N80E-GE3

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      OMO.#: OMO-SIHP6N80E-GE3

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      SIHP6N40D-GE3

      Mfr.#: SIHP6N40D-GE3

      OMO.#: OMO-SIHP6N40D-GE3

      MOSFET 400V Vds 30V Vgs TO-220AB
      SIHP6N40D-E3

      Mfr.#: SIHP6N40D-E3

      OMO.#: OMO-SIHP6N40D-E3

      MOSFET 400V Vds 30V Vgs TO-220AB
      SIHP6N65E-GE3

      Mfr.#: SIHP6N65E-GE3

      OMO.#: OMO-SIHP6N65E-GE3

      MOSFET 650V Vds 30V Vgs TO-220AB
      SIHP6N65E-GE3

      Mfr.#: SIHP6N65E-GE3

      OMO.#: OMO-SIHP6N65E-GE3-VISHAY

      IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
      SIHP6N40D-GE3

      Mfr.#: SIHP6N40D-GE3

      OMO.#: OMO-SIHP6N40D-GE3-VISHAY

      IGBT Transistors MOSFET N-CHANNEL 400V
      SIHP6N40D-E3

      Mfr.#: SIHP6N40D-E3

      OMO.#: OMO-SIHP6N40D-E3-VISHAY

      RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
      SIHP6N40D

      Mfr.#: SIHP6N40D

      OMO.#: OMO-SIHP6N40D-1190

      Neu und Original
      SIHP6N80E-GE3

      Mfr.#: SIHP6N80E-GE3

      OMO.#: OMO-SIHP6N80E-GE3-VISHAY

      MOSFET N-CHAN 800V TO-220AB
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von SIHP6N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,17 $
      2,17 $
      10
      1,80 $
      18,00 $
      100
      1,40 $
      140,00 $
      500
      1,22 $
      610,00 $
      1000
      1,01 $
      1 010,00 $
      2500
      0,94 $
      2 362,50 $
      5000
      0,91 $
      4 550,00 $
      10000
      0,88 $
      8 750,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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