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IPD12CN10NGATMA1

IPD12CN10NGATMA1
Mfr. #:
IPD12CN10NGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD12CN10NGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
67 A
Rds On - Drain-Source-Widerstand:
9.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
OptiMOS 2
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
39 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
21 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
32 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
G IPD12CN10N SP001127806
Gewichtseinheit:
0.139332 oz
Tags
IPD12CN10NG, IPD12CN1, IPD12CN, IPD12C, IPD12, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 49 nC OptiMOS™ Power Mosfet - TO-252-3
***ment14 APAC
MOSFET, N CH, 67A, 100V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:67A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:67A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
IPD12CN10NGATMA1
DISTI # V72:2272_06383600		Infineon Technologies AGTrans MOSFET N-CH 100V 67A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		242
  • 100:$1.2052
  • 25:$1.5154
  • 10:$1.5455
  • 1:$1.9895
IPD12CN10NGATMA1
DISTI # V36:1790_06383600		Infineon Technologies AGTrans MOSFET N-CH 100V 67A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500:$0.7280
IPD12CN10NGATMA1
DISTI # IPD12CN10NGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 67A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9In Stock
  • 1000:$0.9801
  • 500:$1.1829
  • 100:$1.4397
  • 10:$1.7910
  • 1:$1.9900
IPD12CN10NGATMA1
DISTI # IPD12CN10NGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 67A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9In Stock
  • 1000:$0.9801
  • 500:$1.1829
  • 100:$1.4397
  • 10:$1.7910
  • 1:$1.9900
IPD12CN10NGATMA1
DISTI # IPD12CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 67A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.8531
  • 2500:$0.8859
IPD12CN10NGATMA1
DISTI # 33925735		Infineon Technologies AGTrans MOSFET N-CH 100V 67A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$1.1234
IPD12CN10NGATMA1
DISTI # 32346992		Infineon Technologies AGTrans MOSFET N-CH 100V 67A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		242
  • 11:$1.9895
IPD12CN10NGATMA1
DISTI # IPD12CN10NGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 67A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD12CN10NGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.6349
  • 15000:$0.6459
  • 10000:$0.6689
  • 5000:$0.6939
  • 2500:$0.7199
IPD12CN10NGATMA1
DISTI # SP001127806		Infineon Technologies AGTrans MOSFET N-CH 100V 67A 3-Pin TO-252 T/R (Alt: SP001127806)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5679
  • 15000:€0.6119
  • 10000:€0.6629
  • 5000:€0.7229
  • 2500:€0.8839
IPD12CN10NGATMA1
DISTI # 726-IPD12CN10NGATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		1822
  • 1:$1.8300
  • 10:$1.5600
  • 100:$1.2500
  • 500:$1.0900
  • 1000:$0.9070
  • 2500:$0.8440
  • 5000:$0.8130
  • 10000:$0.7820
IPD12CN10NGATMA1Infineon Technologies AGSingle N-Channel 100 V 12.4 mOhm 49 nC OptiMOS Power Mosfet - TO-252-3
RoHS: Not Compliant		2500Reel
  • 2500:$0.6850
IPD12CN10NGATMA1
DISTI # IPD12CN10NGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,67A,125W,PG-TO252-31040
  • 500:$0.7602
  • 100:$0.8165
  • 25:$0.9403
  • 5:$1.0642
  • 1:$1.1825
IPD12CN10NGATMA1
DISTI # XSFP00000157020		Infineon Technologies AG 
RoHS: Compliant		5000 in Stock0 on Order
  • 5000:$0.9133
  • 2500:$0.9786
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPD12CN10NGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,83 $
1,83 $
10
1,56 $
15,60 $
100
1,25 $
125,00 $
500
1,09 $
545,00 $
1000
0,91 $
907,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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