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CSD17507Q5A

CSD17507Q5A
Mfr. #:
CSD17507Q5A
Beschreibung:
MOSFET N-CH 30V 65A 8SON
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD17507Q5A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
CSD17507Q5A Mehr Informationen CSD17507Q5A Product Details
Produkteigenschaft
Attributwert
Hersteller
Texas Instruments
Produktkategorie
FETs - Einzeln
Serie
NexFET
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
8-VSON (5x6)
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
3W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
530pF @ 15V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
13A (Ta), 65A (Tc)
Rds-On-Max-Id-Vgs
10.8 mOhm @ 11A, 10V
Vgs-th-Max-Id
2.1V @ 250μA
Gate-Lade-Qg-Vgs
3.6nC @ 4.5V
Pd-Verlustleistung
3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
13 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Widerstand
11.8 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
2.8 nC
Vorwärts-Transkonduktanz-Min
16 S
Tags
CSD17507Q, CSD17507, CSD1750, CSD175, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm 8-VSONP -55 to 150
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications.
***p One Stop
Trans MOSFET N-CH 30V 13A 8-Pin VSONP EP T/R
***Yang
MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET
***ark
N-CHANNEL, MOSFET, 30V, 65A, SON-8
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 30V, 0.0161ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
IC REG LIN POS ADJ 250MA 8MSOP
***i-Key Marketplace
CSD17507Q5A 30V N-CHANNEL HIGH S
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56
***et Europe
Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R
***ment14 APAC
MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402
***nell
MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***emi
N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
***ure Electronics
N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 65A, 8.4 MOHM, 8.5 NC QG, D-PAK, Pb-Free
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:65W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.5nC; Current Id Max:65A; Package / Case:DPAK; Power Dissipation Pd:65W; Power Dissipation Pd:65W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 30V, 25A, 4.9 mOhm, 13nC Qg, PQFN 3.3x3.3
***nell
MOSFET, N-CH, 30V, 57A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ark
Mosfet Transistor, N Channel, 21 A, 25 V, 0.0063 Ohm, 10 V, 1.9 V
***ure Electronics
IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3
***(Formerly Allied Electronics)
MOSFET; 25V; 57A; 8.7MOHM; 6.8 NC QG; LOGIC LEVEL; D-PAK
*** Source Electronics
Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH 25V 57A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Di
Teil # Beschreibung Aktie Preis
CSD17507Q5A
DISTI # 296-27791-1-ND		MOSFET N-CH 30V 65A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10563In Stock
  • 1000:$0.4206
  • 500:$0.5257
  • 100:$0.7097
  • 10:$0.9200
  • 1:$1.0500
CSD17507Q5A
DISTI # 296-27791-6-ND		MOSFET N-CH 30V 65A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10563In Stock
  • 1000:$0.4206
  • 500:$0.5257
  • 100:$0.7097
  • 10:$0.9200
  • 1:$1.0500
CSD17507Q5A
DISTI # 296-27791-2-ND		MOSFET N-CH 30V 65A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		10000In Stock
  • 12500:$0.3318
  • 5000:$0.3445
  • 2500:$0.3700
CSD17507Q5A
DISTI # CSD17507Q5A		Trans MOSFET N-CH 30V 13A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17507Q5A)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3359
  • 5000:$0.3199
  • 10000:$0.3089
  • 15000:$0.2989
  • 25000:$0.2909
CSD17507Q5A
DISTI # CSD17507Q5A		Trans MOSFET N-CH 30V 13A 8-Pin SON EP T/R (Alt: CSD17507Q5A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.4679
  • 5000:€0.3819
  • 10000:€0.3509
  • 15000:€0.2999
  • 25000:€0.2799
CSD17507Q5A
DISTI # 78Y9859		 1993
  • 1:$0.8700
  • 10:$0.7200
  • 25:$0.6350
  • 50:$0.5490
  • 100:$0.4640
  • 250:$0.4330
  • 500:$0.4030
  • 1000:$0.3720
CSD17507Q5A30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs5000
  • 1000:$0.2600
  • 750:$0.3000
  • 500:$0.3700
  • 250:$0.4500
  • 100:$0.4900
  • 25:$0.5700
  • 10:$0.6200
  • 1:$0.6900
CSD17507Q5A
DISTI # 595-CSD17507Q5A		MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET
RoHS: Compliant		2345
  • 1:$0.8700
  • 10:$0.7200
  • 100:$0.4640
  • 1000:$0.3720
  • 2500:$0.3370
CSD17507Q5APower Field-Effect Transistor, 13A I(D), 30V, 0.0161ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
RoHS: Compliant		5360
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3400
  • 1:$0.3600
CSD17507Q5A
DISTI # 1854245		MOSFET,N CH,30V,65A,SON-8
RoHS: Not Compliant		2038
  • 5:£0.6120
  • 25:£0.5530
  • 100:£0.3510
  • 250:£0.3190
  • 500:£0.2870
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von CSD17507Q5A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,38 $
0,38 $
10
0,36 $
3,56 $
100
0,34 $
33,75 $
500
0,32 $
159,40 $
1000
0,30 $
300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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