We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC886N03LS G DISTI # 30579819 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4185In Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4185In Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC886N03LS G DISTI # C1S322000282117 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC886N03LS G DISTI # BSC886N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC886N03LSGXT DISTI # BSC886N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC886N03LSGATMA1 DISTI # 97Y1253 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power , RoHS Compliant: Yes | 4977 |
|
| BSC886N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC886N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9609 |
|
| BSC886N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC886N03LS G DISTI # 726-BSC886N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 65A TDSON-8 RoHS: Compliant | 0 |
|
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4977 |
|
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4977 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 |
|
|
Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G |
MOSFET N-Ch 30V 65A TDSON-8 |
|
Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
|
Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSGXT OMO.#: OMO-BSC882N03MSGXT-1190 |
Neu und Original |
|
|
Mfr.#: BSC883N03LSG OMO.#: OMO-BSC883N03LSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC884N03MS OMO.#: OMO-BSC884N03MS-1190 |
Neu und Original |
|
|
Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G-1190 |
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R |
|
|
Mfr.#: BSC886N03LSGATMA1 , TDZF |
Neu und Original |
|
|
Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |