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BSC886N03LS G

BSC886N03LS G
Mfr. #:
BSC886N03LS G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 65A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC886N03LS G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
65 A
Rds On - Drain-Source-Widerstand:
6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
BSC886N03
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
3.2 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
4.2 ns
Teil # Aliase:
BSC886N03LSGATMA1 BSC886N3LSGXT SP000475950
Tags
BSC886N03LSG, BSC886, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC886N03LS G
DISTI # 30579819		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 77:$0.2856
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.2533
BSC886N03LS G
DISTI # C1S322000282117		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 50:$0.2240
  • 10:$0.2630
BSC886N03LS G
DISTI # BSC886N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC886N03LS G
    DISTI # SP000475950    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: SP000475950)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€0.3179
    • 10000:€0.2699
    • 20000:€0.2399
    • 30000:€0.2159
    • 50000:€0.2009
    BSC886N03LSGXT
    DISTI # BSC886N03LSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.1959
    • 10000:$0.1889
    • 20000:$0.1819
    • 30000:$0.1759
    • 50000:$0.1729
    BSC886N03LSGATMA1
    DISTI # 97Y1253    		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power , RoHS Compliant: Yes4977
    • 1:$0.8100
    • 10:$0.7070
    • 25:$0.6530
    • 50:$0.5990
    • 100:$0.5450
    • 250:$0.4750
    • 500:$0.4040
    • 1000:$0.3230
    BSC886N03LSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		9609
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    BSC886N03LS GInfineon Technologies AG 
    RoHS: Not Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LS G
    DISTI # 726-BSC886N03LSG    		Infineon Technologies AGMOSFET N-Ch 30V 65A TDSON-8
    RoHS: Compliant    		0
    • 1:$0.6400
    • 10:$0.5290
    • 100:$0.3420
    • 1000:$0.2730
    • 5000:$0.2310
    BSC886N03LSGInfineon Technologies AG 1500
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 1:$1.2200
      • 10:$1.0800
      • 100:$0.8260
      • 500:$0.6120
      • 1000:$0.4900
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 5:£0.6100
      • 25:£0.5510
      • 100:£0.4190
      • 250:£0.3650
      • 500:£0.3100
      Bild Teil # Beschreibung
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G

      		 MOSFET N-Ch 30V 65A TDSON-8
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1

      		 MOSFET LV POWER MOS
      BSC886N03LS

      Mfr.#: BSC886N03LS

      OMO.#: OMO-BSC886N03LS-1190

      		 Neu und Original
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G-1190

      		 Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
      BSC886N03LSG

      Mfr.#: BSC886N03LSG

      OMO.#: OMO-BSC886N03LSG-1190

      		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC886N03LSG E8178

      Mfr.#: BSC886N03LSG E8178

      OMO.#: OMO-BSC886N03LSG-E8178-1190

      		 Neu und Original
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 65A TDSON-8
      BSC886N03LSGATMA1 , TDZF

      Mfr.#: BSC886N03LSGATMA1 , TDZF

      OMO.#: OMO-BSC886N03LSGATMA1-TDZF-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von BSC886N03LS G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,63 $
      0,63 $
      10
      0,53 $
      5,29 $
      100
      0,34 $
      34,20 $
      1000
      0,27 $
      273,00 $
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