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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC886N03LS G DISTI # 30579819 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4185In Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4185In Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC886N03LS G DISTI # C1S322000282117 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC886N03LS G DISTI # BSC886N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC886N03LS G DISTI # SP000475950 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: SP000475950) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC886N03LSGXT DISTI # BSC886N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC886N03LSGATMA1 DISTI # 97Y1253 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes | 4977 |
|
| BSC886N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9609 |
|
| BSC886N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC886N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC886N03LS G DISTI # 726-BSC886N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 65A TDSON-8 RoHS: Compliant | 0 |
|
| BSC886N03LSG | Infineon Technologies AG | 1500 | ||
| BSC886N03LSG | Infineon Technologies AG | 5000 | ||
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4977 |
|
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4977 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G |
MOSFET N-Ch 30V 65A TDSON-8 |
|
|
Mfr.#: BSC886N03LSGATMA1 OMO.#: OMO-BSC886N03LSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC886N03LS OMO.#: OMO-BSC886N03LS-1190 |
Neu und Original |
|
|
Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G-1190 |
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R |
|
|
Mfr.#: BSC886N03LSG OMO.#: OMO-BSC886N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC886N03LSG E8178 OMO.#: OMO-BSC886N03LSG-E8178-1190 |
Neu und Original |
|
Mfr.#: BSC886N03LSGATMA1 |
MOSFET N-CH 30V 65A TDSON-8 |
|
|
Mfr.#: BSC886N03LSGATMA1 , TDZF |
Neu und Original |
