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BSC100N06LS3GATMA1

BSC100N06LS3GATMA1
Mfr. #:
BSC100N06LS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC100N06LS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC100N06LS3GATMA1 DatasheetBSC100N06LS3GATMA1 Datasheet (P4-P6)BSC100N06LS3GATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
34 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
50 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
32 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
58 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
BSC100N06LS3 BSC1N6LS3GXT G SP000453664
Gewichtseinheit:
0.007055 oz
Tags
BSC100N06LS3, BSC100N06, BSC100N0, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
***ure Electronics
Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel PowerTrench® MOSFET 60V, 42A, 7.4mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 42A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 14A I(D), 60V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch noderinging of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimizedfor low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***nell
MOSFET, N-CH, 60V, 42A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.6V; Power Dissipation Pd: 69W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ark
Mosfet Transistor, N Channel, 12 A, 60 V, 9.4 Mohm, 10 V, 4.9 V
***ure Electronics
Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 12A; 9.4 MOHM; 26 NC QG; SO-8; Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***nell
MOSFET, N, 60V, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipa
***roFlash
Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
Single N-Channel 60 V 0.1 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N CH, 60V, 14A, TO-252-3
***ark
N Channel Mosfet, 60V, 14A, D-Pak, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: No
***et
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
***i-Key
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 60 V 0.1 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 60V, 14A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		20000In Stock
  • 5000:$0.4243
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3339
  • 10000:$0.3219
  • 20000:$0.3099
  • 30000:$0.2999
  • 50000:$0.2939
BSC100N06LS3GATMA1
DISTI # 47W3311		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes3102
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
  • 2500:$0.4110
  • 10000:$0.3860
BSC100N06LS3 G
DISTI # 726-BSC100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1
DISTI # 726-BSC100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3550
BSC100N06LS3GATMA1
DISTI # 7545298		Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK1395
  • 5:£0.5760
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 7545298P		Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL1270
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 2212844		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		7982
  • 5:£0.4240
  • 25:£0.3630
  • 100:£0.2870
  • 250:£0.2780
  • 500:£0.2680
BSC100N06LS3GATMA1
DISTI # 2212844		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		3102
  • 1:$1.5300
  • 10:$1.2900
  • 100:$0.9870
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1990
Menge eingeben:
Der aktuelle Preis von BSC100N06LS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,90 $
0,90 $
10
0,77 $
7,71 $
100
0,59 $
59,20 $
500
0,52 $
261,50 $
1000
0,41 $
413,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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