BSC100N06LS3

BSC100N06LS3 G vs BSC100N06LS3GATMA1 vs BSC100N06LS3G

 
PartNumberBSC100N06LS3 GBSC100N06LS3GATMA1BSC100N06LS3G
DescriptionMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 360V,50A,N Channel Power MOSFET
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8PG-TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance7.8 mOhms10 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge45 nC34 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation50 W50 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min32 S32 S-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time58 ns58 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time8 ns8 ns-
Part # AliasesBSC100N06LS3GATMA1 BSC1N6LS3GXT SP000453664BSC100N06LS3 BSC1N6LS3GXT G SP000453664-
Unit Weight0.003527 oz0.007055 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC100N06LS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N06LS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N06LS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC100N06LS3 G Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
BSC100N06LS3G 60V,50A,N Channel Power MOSFET
BSC100N06LS3GXT Neu und Original
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