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BSC100N06LS3GATMA1

BSC100N06LS3GATMA1
Mfr. #:
BSC100N06LS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 60V 50A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC100N06LS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineo
Produktkategorie
FETs - Einzeln
Serie
OptiMOS
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
BSC100N06LS3 BSC100N06LS3GXT G SP000453664
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PG-TDSON-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
50W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
60V
Eingangskapazität-Ciss-Vds
3500pF @ 30V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
12A (Ta), 50A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 50A, 10V
Vgs-th-Max-Id
2.2V @ 23μA
Gate-Lade-Qg-Vgs
45nC @ 10V
Pd-Verlustleistung
50 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns
Anstiegszeit
58 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
50 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V
Rds-On-Drain-Source-Widerstand
10 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
19 ns
Typische-Einschaltverzögerungszeit
8 ns
Qg-Gate-Ladung
15 nC
Vorwärts-Transkonduktanz-Min
63 S
Kanal-Modus
Erweiterung
Tags
BSC100N06LS3, BSC100N06, BSC100N0, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
***ure Electronics
Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		20000In Stock
  • 5000:$0.4243
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3339
  • 10000:$0.3219
  • 20000:$0.3099
  • 30000:$0.2999
  • 50000:$0.2939
BSC100N06LS3GATMA1
DISTI # 47W3311		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes3102
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
  • 2500:$0.4110
  • 10000:$0.3860
BSC100N06LS3 G
DISTI # 726-BSC100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1
DISTI # 726-BSC100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3550
BSC100N06LS3GATMA1
DISTI # 7545298		Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK1395
  • 5:£0.5760
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 7545298P		Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL1270
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 2212844		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		7982
  • 5:£0.4240
  • 25:£0.3630
  • 100:£0.2870
  • 250:£0.2780
  • 500:£0.2680
BSC100N06LS3GATMA1
DISTI # 2212844		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant		3102
  • 1:$1.5300
  • 10:$1.2900
  • 100:$0.9870
Bild Teil # Beschreibung
BSC100N06LS3 G

Mfr.#: BSC100N06LS3 G

OMO.#: OMO-BSC100N06LS3-G

 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N06LS3GATMA1

Mfr.#: BSC100N06LS3GATMA1

OMO.#: OMO-BSC100N06LS3GATMA1

 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N06LS

Mfr.#: BSC100N06LS

OMO.#: OMO-BSC100N06LS-1190

 Neu und Original
BSC100N06LS3 G

Mfr.#: BSC100N06LS3 G

OMO.#: OMO-BSC100N06LS3-G-1190

 Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
BSC100N06LS3G

Mfr.#: BSC100N06LS3G

OMO.#: OMO-BSC100N06LS3G-1190

 60V,50A,N Channel Power MOSFET
BSC100N06LS3GATMA1

Mfr.#: BSC100N06LS3GATMA1

OMO.#: OMO-BSC100N06LS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 50A TDSON-8
BSC100N06LS3GXT

Mfr.#: BSC100N06LS3GXT

OMO.#: OMO-BSC100N06LS3GXT-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von BSC100N06LS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,44 $
0,44 $
10
0,42 $
4,19 $
100
0,40 $
39,68 $
500
0,37 $
187,35 $
1000
0,35 $
352,70 $
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