IPB034N03LGATMA1

Mfr. #:: IPB034N03LGATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 30V 80A TO-263-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB034N03LGATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPB034N03LG, IPB034N03, IPB034, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB034N03LGATMA1 Beschreibung

***ical: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 80A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ark: Mosfet Transistor, N Channel, 25 A, 30 V, 0.004 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***roFlash: N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity: N Channel; Contin

***ure Electronics: Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ineon: Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant

***nell: MOSFET, N-CH 30V 86A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 86A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dis

***ure Electronics: Single N-Channel 30 V 4.2 mOhm 31 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 93A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

***ure Electronics: N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***et Europe: Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA

***emi: PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ

***ment14 APAC: MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks

***ark: Power MOSFET 30V 102A 3.6 mOhm Single N-Channel u8FL / REEL RoHS Compliant: Yes

***Yang: Trans MOSFET N-CH 30V 102A 8-Pin WDFN T/R - Tape and Reel

*** Electronics: MOSFET NFET U8FL 30V 102 A 3.6MOH

***r Electronics: Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: MOSFET, Single N-Channel, 30 V, 102 A

***ment14 APAC: MOSFET'S - SINGLE MOSFET'S TRANSISTORS;

***i-Key: MOSFET N-CH 30V 22A/102A 8WDFN

***enic: 30V 102A 2.9m´Î@10V30A 3.2W 2.2V@250uA 71pF@15V N Channel 1.988nF@15V [email protected] -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB034N03LGATMA1 DISTI # V72:2272_06384520	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8423 500:$0.8512 250:$1.0411 100:$1.1176 25:$1.4017 10:$1.4157 1:$1.7416
IPB034N03LGATMA1 DISTI # V36:1790_06384520	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.5859 500000:$0.5864 100000:$0.6402 10000:$0.7472 1000:$0.7658
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	157In Stock	500:$0.9520 100:$1.1587 10:$1.4420 1:$1.6000
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	157In Stock	500:$0.9520 100:$1.1587 10:$1.4420 1:$1.6000
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.6690 5000:$0.6866 2000:$0.7130 1000:$0.7658
IPB034N03LGATMA1 DISTI # 31056862	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	10:$1.7416
IPB034N03LGATMA1 DISTI # 31053479	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.6030
IPB034N03LGXT DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	10000:$0.6389 6000:$0.6499 4000:$0.6729 2000:$0.6979 1000:$0.7239
IPB034N03LGATMA1 DISTI # SP000304126	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: SP000304126) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.5719 6000:€0.6159 4000:€0.6679 2000:€0.7279 1000:€0.8899
IPB034N03LGATMA1 DISTI # 60R2650	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 80A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	500:$0.8450 100:$1.0200 10:$1.3100 1:$1.4600
IPB034N03L G DISTI # 726-IPB034N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	1790	1:$1.4000 10:$1.2000 100:$0.9170 500:$0.8100 1000:$0.6400
IPB034N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	3000	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IPB034N03LGATMA1 DISTI # 7545424	Infineon Technologies AG	MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, PK	110	500:£0.5800 250:£0.6580 50:£0.7580 10:£0.8600 5:£1.0820
IPB034N03LGATMA1 DISTI # 7545424P	Infineon Technologies AG	MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, RL	1860	500:£0.5800 250:£0.6580 50:£0.7580 10:£0.8600
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,80A,94W,PG-TO263-3	954	1000:$0.5935 100:$0.6374 10:$0.7331 3:$0.8300 1:$0.9223
IPB034N03LGATMA1 DISTI # 1775527	Infineon Technologies AG	MOSFET, N CH, 80A, 30V, PG-TO263-3 RoHS: Compliant	1751	500:$1.2200 100:$1.3800 10:$1.8100 1:$2.1100
IPB034N03LGATMA1 DISTI # 1775527	Infineon Technologies AG	MOSFET, N CH, 80A, 30V, PG-TO263-3	1751	500:£0.5870 250:£0.6260 100:£0.6650 25:£0.8710 5:£1.0100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB034N06L3GATMA1 OMO.#: OMO-IPB034N06L3GATMA1	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06L3GATMA1 OMO.#: OMO-IPB034N06L3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 90A TO263-3
	Mfr.#: IPB034N06L3GXT OMO.#: OMO-IPB034N06L3GXT-1190	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
	Mfr.#: IPB034N06L3 OMO.#: OMO-IPB034N06L3-1190	Neu und Original
	Mfr.#: IPB034N06L3G OMO.#: OMO-IPB034N06L3G-1190	60V,3.4m��,90A,N-Channel Power MOSFET
	Mfr.#: IPB034N06N3 OMO.#: OMO-IPB034N06N3-1190	Neu und Original
	Mfr.#: IPB034N06N3G OMO.#: OMO-IPB034N06N3G-1190	Trans MOSFET N-CH 60V 100A 7-Pin(6+Tab) TO-263 - Bulk (Alt: IPB034N06N3G)
	Mfr.#: IPB034N06N3G , MS10-05AT OMO.#: OMO-IPB034N06N3G-MS10-05AT-1190	Neu und Original
	Mfr.#: IPB034N06L3 G OMO.#: OMO-IPB034N06L3-G-124	Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06N3 G OMO.#: OMO-IPB034N06N3-G-126	IGBT Transistors MOSFET N-Ch 60V 100A D2PAK-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von IPB034N03LGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,86 $~~; ~~0,86 $~~

10: ~~0,81 $~~; ~~8,12 $~~

100: ~~0,77 $~~; ~~76,95 $~~

500: ~~0,73 $~~; ~~363,40 $~~

1000: ~~0,68 $~~; ~~684,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB034N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes