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IPD65R225C7ATMA1

IPD65R225C7ATMA1
Mfr. #:
IPD65R225C7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 650V 11A TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R225C7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPD65R2, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
***ure Electronics
Single N-Channel 650 V 225 mOhm 20 nC CoolMOS™ Power Mosfet - TO-252-3
***ical
Trans MOSFET N-CH 700V 11A Automotive 3-Pin(2+Tab) DPAK T/R
***p One Stop Japan
Trans MOSFET N-CH 700V 11A 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 650(Min)V 11A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 650V 11A TO252-3
***ronik
N-CH 650V 11A 225mOhm TO252
***ment14 APAC
MOSFET, N-CH, 650V, 11A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.199ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 650V, 11A, TO-252-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:11A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.199ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.5V; Straty mocy Pd:63W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
Teil # Mfg. Beschreibung Aktie Preis
IPD65R225C7ATMA1
DISTI # 22105496		Infineon Technologies AGTrans MOSFET N-CH 700V 11A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$1.0890
IPD65R225C7ATMA1
DISTI # IPD65R225C7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 11A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1880In Stock
  • 1000:$1.1860
  • 500:$1.4314
  • 100:$1.7422
  • 10:$2.1680
  • 1:$2.4100
IPD65R225C7ATMA1
DISTI # IPD65R225C7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 11A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1880In Stock
  • 1000:$1.1860
  • 500:$1.4314
  • 100:$1.7422
  • 10:$2.1680
  • 1:$2.4100
IPD65R225C7ATMA1
DISTI # IPD65R225C7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 11A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.0324
  • 2500:$1.0721
IPD65R225C7ATMA1
DISTI # V72:2272_06378223		Infineon Technologies AGTrans MOSFET N-CH 700V 11A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD65R225C7ATMA1
    DISTI # V36:1790_06378223    		Infineon Technologies AGTrans MOSFET N-CH 700V 11A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		0
    • 2500000:$0.8764
    • 25000:$1.0550
    • 2500:$1.0720
    IPD65R225C7ATMA1
    DISTI # IPD65R225C7    		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 11A 3-Pin TO-252 T/R (Alt: IPD65R225C7)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Asia - 7500
    • 5000:$0.3816
    • 2500:$0.4089
    IPD65R225C7ATMA1
    DISTI # IPD65R225C7ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 11A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R225C7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.9599
    • 15000:$0.9779
    • 10000:$1.0119
    • 5000:$1.0499
    • 2500:$1.0889
    IPD65R225C7ATMA1
    DISTI # SP000929430    		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 11A 3-Pin TO-252 T/R (Alt: SP000929430)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.8769
    • 15000:€0.9399
    • 10000:€1.0119
    • 5000:€1.0969
    • 2500:€1.3159
    IPD65R225C7ATMA1
    DISTI # 54X5227    		Infineon Technologies AGMOSFET, N-CH, 650V, 11A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.199ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes0
    • 1000:$1.1000
    • 500:$1.3300
    • 100:$1.5300
    • 10:$1.9100
    • 1:$2.2400
    IPD65R225C7
    DISTI # 726-IPD65R225C7    		Infineon Technologies AGMOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7
    RoHS: Compliant    		0
    • 1:$2.2200
    • 10:$1.8900
    • 100:$1.5100
    • 500:$1.3200
    • 1000:$1.0900
    IPD65R225C7ATMA1
    DISTI # 2420495    		Infineon Technologies AGMOSFET, N-CH, 650V, 11A, TO-252-3
    RoHS: Compliant    		3101
    • 100:$2.3300
    • 10:$2.9100
    • 1:$3.4200
    IPD65R225C7ATMA1
    DISTI # 2420495    		Infineon Technologies AGMOSFET, N-CH, 650V, 11A, TO-252-33398
    • 500:£1.0200
    • 250:£1.1000
    • 100:£1.1700
    • 10:£1.4800
    • 1:£1.9500
    Bild Teil # Beschreibung
    IPD65R225C7

    Mfr.#: IPD65R225C7

    OMO.#: OMO-IPD65R225C7

    		 MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7
    IPD65R225C7

    Mfr.#: IPD65R225C7

    OMO.#: OMO-IPD65R225C7-1190

    		 MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7
    IPD65R225C7ATMA1

    Mfr.#: IPD65R225C7ATMA1

    OMO.#: OMO-IPD65R225C7ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 11A TO252-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von IPD65R225C7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,57 $
    0,57 $
    10
    0,54 $
    5,44 $
    100
    0,52 $
    51,52 $
    500
    0,49 $
    243,30 $
    1000
    0,46 $
    458,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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