IPD110N12N3GBUMA1

Mfr. #:: IPD110N12N3GBUMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 120V 75A TO252-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD110N12N3GBUMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPD110, IPD11, IPD1, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD110N12N3GBUMA1 Beschreibung

***et Europe: Trans MOSFET N-CH 120V 75A 3-Pin(2+Tab) TO-252

***ronik: MOSFET 120V 11mOhm 75A TO252

***i-Key Marketplace: OPTLMOS N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - DPAK

***ment14 APAC: MOSFET, N-CH, 100V, 80A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS

***ark: MOSFET, N-CH, 100V, 80A, 175DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 80A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Lighting LED

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 143 W

***roFlash: Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0111ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 143W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***icroelectronics: N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in DPAK package

***ure Electronics: N-Channel 100 V 10 mOhm STripFET VII DeepGATE Power Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 70A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***r Electronics: Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***icroelectronics: Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package

***ical: Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, AEC-Q101, N-CH, 100V, 80A, 120W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: N-Channel 100 V 0.010 Ohm Surface Mount STripFET F7 Power Mosfet - DPAK-3

***icroelectronics: Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in a DPAK package

***ment14 APAC: MOSFET, AECQ101, N-CH, 100V, 70A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Source Voltage Vds:100V; On

***r Electronics: Power Field-Effect Transistor, 70A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, AECQ101, N-CH, 100V, 70A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD110N12N3GATMA1 DISTI # V72:2272_06383619	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	299	250:$1.1297 100:$1.2551 25:$1.5564 10:$1.5606 1:$2.0189
IPD110N12N3GATMA1 DISTI # V36:1790_06383619	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	0	2500000:$0.7354 1250000:$0.7358 250000:$0.7840 25000:$0.8786 2500:$0.8949
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13340In Stock	1000:$0.9900 500:$1.1948 100:$1.4543 10:$1.8090 1:$2.0100
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13340In Stock	1000:$0.9900 500:$1.1948 100:$1.4543 10:$1.8090 1:$2.0100
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	5000:$0.8617 2500:$0.8949
IPD110N12N3GBUMA1 DISTI # IPD110N12N3GBUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD110N12N3GBUMA1 DISTI # IPD110N12N3GBUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD110N12N3GBUMA1 DISTI # IPD110N12N3GBUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD110N12N3 G DISTI # 30745488	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin(2+Tab) TO-252 RoHS: Compliant	6330	8:$3.2750
IPD110N12N3GATMA1 DISTI # 31696314	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	299	8:$2.0189
IPD110N12N3GBUMA1 DISTI # IPD110N12N3GBUMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD110N12N3GBUMA1) Min Qty: 432 Container: Bulk	Americas - 0	4320:$0.7359 2160:$0.7499 1296:$0.7759 864:$0.8049 432:$0.8349
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD110N12N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.8019 15000:$0.8159 10000:$0.8449 5000:$0.8759 2500:$0.9089
IPD110N12N3GATMA1 DISTI # SP001127808	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R (Alt: SP001127808) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6859 15000:€0.7349 10000:€0.7919 5000:€0.8579 2500:€1.0299
IPD110N12N3GATMA1 DISTI # 47W3469	Infineon Technologies AG	MOSFET, N CHANNEL, 120V, 75A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0092ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2152	1000:$1.0200 500:$1.2200 250:$1.3100 100:$1.4000 50:$1.5200 25:$1.6300 10:$1.7500 1:$2.0600
IPD110N12N3 G DISTI # 726-IPD110N12N3G	Infineon Technologies AG	MOSFET N-Ch 120V 75A DPAK-2 OptiMOS 3 RoHS: Compliant	0
IPD110N12N3GATMA1 DISTI # 726-IPD110N12N3GATM1	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	9748	1:$1.8500 10:$1.5700 100:$1.2600 500:$1.1000 1000:$0.9160 2500:$0.8530 5000:$0.8210 10000:$0.7900
IPD110N12N3GBUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 75A I(D), 120V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	50	1000:$0.7600 500:$0.8000 100:$0.8400 25:$0.8700 1:$0.9400
IPD110N12N3GATMA1 DISTI # 7545462P	Infineon Technologies AG	MOSFET N-CHANNEL 120V 75A OPTIMOS3 TO252, RL	1844	1250:£0.6700 626:£0.7450 126:£0.8350 26:£0.9250
IPD110N12N3GATMA1 DISTI # 7545462	Infineon Technologies AG	MOSFET N-CHANNEL 120V 75A OPTIMOS3 TO252, PK	106	1250:£0.6700 626:£0.7450 126:£0.8350 26:£0.9250 2:£1.5200
IPD110N12N3 G DISTI # TMOS1799	Infineon Technologies AG	N-CH 120V 75A 9,2mOhm TO252-3 RoHS: Compliant	Stock DE - 7500Stock HK - 0Stock US - 0	2500:$0.8317
IPD110N12N3GATMA1 DISTI # 2212834	Infineon Technologies AG	MOSFET, N-CH, 120V, 75A, TO252-3 RoHS: Compliant	1117	10000:$1.2400 5000:$1.2700 2500:$1.3300 1000:$1.4200 500:$1.6300 100:$1.9300 10:$2.3600 1:$2.7200
IPD110N12N3GATMA1 DISTI # 2212834	Infineon Technologies AG	MOSFET, N-CH, 120V, 75A, TO252-3	3527	500:£0.8570 250:£0.9190 100:£0.9800 10:£1.2600 1:£1.6400

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPD110N12N3GATMA1 OMO.#: OMO-IPD110N12N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPD110N12N3G OMO.#: OMO-IPD110N12N3G-1190	Neu und Original
	Mfr.#: IPD110N12N3GATMA1 OMO.#: OMO-IPD110N12N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 120V 75A TO252-3
	Mfr.#: IPD110N12N3GBUMA1 OMO.#: OMO-IPD110N12N3GBUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 120V 75A TO252-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von IPD110N12N3GBUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IPD110 3
IPD11 5
IPD1 167
IPD 1152

Neueste Produkte

High Current IR3847 Gen3 SupIRBuck®

IR3847 features a proprietary modulator scheme that reduces jitter by 90% compared to standard solutions
KITXMC48IOTAWSWIFITOBO1 Base Kit Featuring an XMC4

Infineon's KITXMC48IOTAWSWIFITOBO1 is a base kit featuring an XMC4800 MCU that includes connectors in Arduino and Click Board™ compatible form factors.
IR25750 Current Sensing IC

IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
OptiMOS 3 Devices

OptiMOS 3 devices from Infineon are intended for power conversion and power management applications that require high efficiency and power density.
XENSIV™ DPS368 Ultra-Small Waterproof Pressure Sen

Infineon’s XENSIV™ DPS368 ultra-small waterproof pressure sensor is capable of measuring both pressure and temperature.

More Newest Products

IPD110N12N3GBUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes