CSD23202W10T

Mfr. #:: CSD23202W10T
Beschreibung:: MOSFET 12V PCH NexFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD23202W10T Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD23202W10T Mehr Informationen CSD23202W10T Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DSBGA-4

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 12 V

Id - Kontinuierlicher Drainstrom:: 2.2 A

Rds On - Drain-Source-Widerstand:: 92 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 600 mV

Vgs - Gate-Source-Spannung:: 6 V

Qg - Gate-Ladung:: 2.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1 W

Aufbau:: Single

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 0.62 mm

Länge:: 1 mm

Serie:: CSD23202W10

Transistortyp:: 1 P-Channel

Breite:: 1 mm

Marke:: Texas Instruments

Abfallzeit:: 21 ns

Produktart:: MOSFET

Anstiegszeit:: 4 ns

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 58 ns

Typische Einschaltverzögerungszeit:: 9 ns

Gewichtseinheit:: 0.000032 oz

Tags: CSD2320, CSD232, CSD23, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD23202W10T Beschreibung

***as Instruments: -12V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 53mOhm 4-DSBGA -55 to 150

***et Europe: Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R

***i-Key: MOSFET P-CH 12V 2.2A 4DSBGA

***ark: Mosfet, P Ch, -12V, -2.2A, Dsbga-4; Transistor Polarity:p Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(On):0.044Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600Mv; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, P CH, -12V, -2.2A, DSBGA-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1W; Transistor Case Style:DSBGA; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, P CH, -12V, -2.2A, DSBGA-4; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.2A; Tensione Drain Source Vds:-12V; Resistenza di Attivazione Rds(on):0.044ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-600mV; Dissipazione di Potenza Pd:1W; Modello Case Transistor:DSBGA; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

***OMO Electronic: This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

CSD23202W10T Mehr Informationen

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD23202W10T DISTI # 31708922	Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R RoHS: Compliant	10000	1250:$0.1836 750:$0.2046 500:$0.2361 250:$0.2781
CSD23202W10T DISTI # 296-38338-1-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19550In Stock	100:$0.3275 10:$0.4370 1:$0.5200
CSD23202W10T DISTI # 296-38338-6-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19550In Stock	100:$0.3275 10:$0.4370 1:$0.5200
CSD23202W10T DISTI # 296-38338-2-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	19250In Stock	1250:$0.1802 750:$0.2014 500:$0.2332 250:$0.2756
CSD23202W10T DISTI # V72:2272_07248874	Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R RoHS: Compliant	0
CSD23202W10T DISTI # V39:1801_07248874	Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R RoHS: Compliant	0
CSD23202W10T DISTI # CSD23202W10T	Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD23202W10T) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.1329 12500:$0.1359 7500:$0.1409 5000:$0.1459 2500:$0.1529
CSD23202W10T	-12V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 53mOhm	3500	1000:$0.1200 750:$0.1400 500:$0.1700 250:$0.2100 100:$0.2200 25:$0.2600 10:$0.2800 1:$0.3200
CSD23202W10 DISTI # 595-CSD23202W10	MOSFET 12V P-channel NexFET Pwr MOSFET RoHS: Compliant	25512	1:$0.4000 10:$0.3300 100:$0.2030 1000:$0.1570 3000:$0.1340 9000:$0.1250 24000:$0.1180 45000:$0.1150
CSD23202W10T DISTI # 595-CSD23202W10T	MOSFET 12V PCH NexFET RoHS: Compliant	234	1:$0.4600 10:$0.3800 100:$0.2340 250:$0.2340 1000:$0.1810 2500:$0.1540 10000:$0.1440 25000:$0.1360 50000:$0.1330
CSD23202W10T . DISTI # 2447871RL	MOSFET, P CH, -12V, -2.2A, DSBGA-4 RoHS: Compliant	0	25000:$0.2100 10000:$0.2220 2500:$0.2370 1000:$0.2790 250:$0.3200 100:$0.3610 10:$0.5850 1:$0.7070
CSD23202W10T . DISTI # 2447871	MOSFET, P CH, -12V, -2.2A, DSBGA-4 RoHS: Compliant	0	25000:$0.2100 10000:$0.2220 2500:$0.2370 1000:$0.2790 250:$0.3200 100:$0.3610 10:$0.5850 1:$0.7070

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Verfügbarkeit

Aktie:: 234
Auf Bestellung:: 2217
Menge eingeben:

Der aktuelle Preis von CSD23202W10T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,46 $~~; ~~0,46 $~~

10: ~~0,38 $~~; ~~3,80 $~~

100: ~~0,23 $~~; ~~23,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD23202W10T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes