PartNumber | CSD23202W10 | CSD23202W10T | CSD23201W10 |
Description | MOSFET 12V P-channel NexFET Pwr MOSFET | MOSFET 12V PCH NexFET | MOSFET P-Ch NexFET Power MOSFETs |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DSBGA-4 | DSBGA-4 | DSBGA-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 12 V | 12 V | 12 V |
Id Continuous Drain Current | 2.2 A | 2.2 A | 2.2 A |
Rds On Drain Source Resistance | 92 mOhms | 92 mOhms | 82 mOhms |
Vgs th Gate Source Threshold Voltage | 900 mV | 600 mV | - |
Vgs Gate Source Voltage | 6 V | 6 V | 6 V |
Qg Gate Charge | 3.8 nC | 2.9 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1 W | 1 W | 1000 mW |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Reel |
Height | 0.62 mm | 0.62 mm | 0.62 mm |
Length | 1 mm | 1 mm | 1 mm |
Series | CSD23202W10 | CSD23202W10 | CSD23201W10 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 1 mm | 1 mm | 1 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 5.6 S | - | - |
Fall Time | 21 ns | 21 ns | 29 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4 ns | 4 ns | 19 ns |
Factory Pack Quantity | 3000 | 250 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 58 ns | 58 ns | 68 ns |
Typical Turn On Delay Time | 9 ns | 9 ns | 24 ns |
Unit Weight | 0.007055 oz | 0.000032 oz | - |