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CSD23201W10

CSD23201W10
Mfr. #:
CSD23201W10
Beschreibung:
MOSFET P-Ch NexFET Power MOSFETs
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD23201W10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD23201W10 Mehr Informationen CSD23201W10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DSBGA-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
2.2 A
Rds On - Drain-Source-Widerstand:
82 mOhms
Vgs - Gate-Source-Spannung:
6 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1000 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
0.62 mm
Länge:
1 mm
Serie:
CSD23201W10
Transistortyp:
1 P-Channel
Breite:
1 mm
Marke:
Texas Instruments
Abfallzeit:
29 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 ns
Typische Einschaltverzögerungszeit:
24 ns
Tags
CSD2320, CSD232, CSD23, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel NexFET™ Power MOSFET 4-DSBGA -55 to 150
***ark
P CHANNEL MOSFET, NEXFET, -12V, -2.2A, DSBGA-4
***et Europe
Trans MOSFET P-CH 12V 2.2A 4-Pin WLCSP T/R
***i-Key
MOSFET P-CH 12V 2.2A 4DSBGA
***th Star Micro
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
***ment14 APAC
Prices include import duty and tax. FET, P CH, SINGLE, 12V, 4DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:600mV; Power Dissipation Pd:1W; Transistor Case Style:DSBGA; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-2.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:12V; Voltage Vgs Max:-6V; Voltage Vgs Rds on Measurement:4.5V
***nell
FET, P CH, SINGOLO, 12V, 4DSBGA; Polarità Transistor:Canale P; Corrente Continua di Drain Id:1.1A; Tensione Drain Source Vds:-12V; Resistenza di Attivazione Rds(on):0.066ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:600mV; Dissipazione di Potenza Pd:1W; Modello Case Transistor:DSBGA; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:-2.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:12V; Tensione Vgs Max:-6V; Tensione Vgs di Misurazione Rds on:4.5V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET
Teil # Beschreibung Aktie Preis
CSD23201W10
DISTI # 296-24258-2-ND		MOSFET P-CH 12V 2.2A 4DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    CSD23201W10
    DISTI # 296-24258-1-ND    		MOSFET P-CH 12V 2.2A 4DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      CSD23201W10
      DISTI # 296-24258-6-ND      		MOSFET P-CH 12V 2.2A 4DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        CSD23201W10
        DISTI # CSD23201W10        		Trans MOSFET P-CH 12V 2.2A 4-Pin WLCSP T/R (Alt: CSD23201W10)
        RoHS: Compliant
        Min Qty: 1250        		Americas - 0
        • 1250:$0.2899
        • 1252:$0.2759
        • 2502:$0.2669
        • 6250:$0.2579
        • 12500:$0.2499
        CSD23201W10
        DISTI # 595-CSD23201W10        		MOSFET P-Ch NexFET Power MOSFETs
        RoHS: Compliant        		0
          CSD23201W10Small Signal Field-Effect Transistor, 2.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		459193
          • 1000:$0.2900
          • 500:$0.3100
          • 100:$0.3200
          • 25:$0.3400
          • 1:$0.3600
          CSD23201W102200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET240
          • 57:$0.6300
          • 12:$0.9000
          • 1:$1.8000
          CSD23201W10
          DISTI # 1710777RL          		FET, P CH, SINGLE, 12V, 4DSBGA
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8950
          • 100:$0.7300
          • 500:$0.6170
          • 1000:$0.5440
          • 3000:$0.4870
          • 9000:$0.4210
          • 24000:$0.4150
          CSD23201W10
          DISTI # 1710777          		FET, P CH, SINGLE, 12V, 4DSBGA
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8950
          • 100:$0.7300
          • 500:$0.6170
          • 1000:$0.5440
          • 3000:$0.4870
          • 9000:$0.4210
          • 24000:$0.4150
          Bild Teil # Beschreibung
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          CSD23201W10

          Mfr.#: CSD23201W10

          OMO.#: OMO-CSD23201W10

          		 MOSFET P-Ch NexFET Power MOSFETs
          CSD23201W10

          Mfr.#: CSD23201W10

          OMO.#: OMO-CSD23201W10-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 12V 2.2A 4DSBGA
          CSD23381F

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          CSD23382F4T

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          Mfr.#: CSD23203WT

          OMO.#: OMO-CSD23203WT-TEXAS-INSTRUMENTS

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          CSD23280F3

          Mfr.#: CSD23280F3

          OMO.#: OMO-CSD23280F3-TEXAS-INSTRUMENTS

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          CSD23382F4

          Mfr.#: CSD23382F4

          OMO.#: OMO-CSD23382F4-TEXAS-INSTRUMENTS

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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von CSD23201W10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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