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DMN1019USN-7

DMN1019USN-7
Mfr. #:
DMN1019USN-7
Hersteller:
Diodes Incorporated
Beschreibung:
IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN1019USN-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN1019USN-7 DatasheetDMN1019USN-7 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Einzeln
Serie
DMN1019
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.000282 oz
Montageart
SMD/SMT
Paket-Koffer
TO-236-3, SC-59, SOT-23-3
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
SC-59
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
680mW
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
12V
Eingangskapazität-Ciss-Vds
2426pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
9.3A (Ta)
Rds-On-Max-Id-Vgs
10 mOhm @ 9.7A, 4.5V
Vgs-th-Max-Id
800mV @ 250μA
Gate-Lade-Qg-Vgs
50.6nC @ 8V
Pd-Verlustleistung
1.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
16.8 ns
Anstiegszeit
57.6 ns
Vgs-Gate-Source-Spannung
4.5 V
ID-Dauer-Drain-Strom
9.3 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Vgs-th-Gate-Source-Threshold-Voltage
0.53 V
Rds-On-Drain-Source-Widerstand
41 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
22.2 ns
Typische-Einschaltverzögerungszeit
7.6 ns
Qg-Gate-Ladung
27.3 nC
Kanal-Modus
Erweiterung
Tags
DMN1019US, DMN1019, DMN101, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 12 V 10 mO 50.6 nC SMT Enhancement Mode Mosfet - SC-59 (SOT-23)
***Components
In a Pack of 50, N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 Diodes Inc DMN1019USN-7
***p One Stop Global
Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
***et Europe
Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R
***i-Key
MOSFET N-CH 12V 9.3A SC59
***ronik
N-CH 12V 9,3A 7mOhm at 4,5V
***ark
Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:n Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800Mv; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:680mW; Transistor Case Style:SC-59; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 12V, 9.3A, SC-59; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:12V; Rezystancja przewodzenia Rds(on):0.007ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:800mV; Straty mocy Pd:680mW; Rodzaj obudowy tranzystora:SC-59; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2019)
Teil # Mfg. Beschreibung Aktie Preis
DMN1019USN-7
DISTI # V72:2272_06697881		Zetex / Diodes IncTrans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
RoHS: Compliant		936
  • 500:$0.1588
  • 250:$0.1606
  • 100:$0.1622
  • 25:$0.3026
  • 10:$0.3056
  • 1:$0.4084
DMN1019USN-7
DISTI # DMN1019USN-7DICT-ND		Diodes IncorporatedMOSFET N-CH 12V 9.3A SC59
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24003In Stock
  • 1000:$0.1493
  • 500:$0.1991
  • 100:$0.2903
  • 10:$0.4230
  • 1:$0.5400
DMN1019USN-7
DISTI # DMN1019USN-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 12V 9.3A SC59
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24003In Stock
  • 1000:$0.1493
  • 500:$0.1991
  • 100:$0.2903
  • 10:$0.4230
  • 1:$0.5400
DMN1019USN-7
DISTI # DMN1019USN-7DITR-ND		Diodes IncorporatedMOSFET N-CH 12V 9.3A SC59
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		21000In Stock
  • 3000:$0.1329
DMN1019USN-7
DISTI # 30667275		Zetex / Diodes IncTrans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
RoHS: Compliant		936
  • 500:$0.1588
  • 250:$0.1606
  • 100:$0.1622
  • 69:$0.3026
DMN1019USN-7
DISTI # DMN1019USN-7		Diodes IncorporatedTrans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN1019USN-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0919
  • 6000:$0.0869
  • 12000:$0.0829
  • 18000:$0.0789
  • 30000:$0.0769
DMN1019USN-7
DISTI # 621-DMN1019USN-7		Diodes IncorporatedMOSFET 12V N-Ch Enh FET 2426pF 27.3nC
RoHS: Compliant		43527
  • 1:$0.4300
  • 10:$0.3250
  • 100:$0.1760
  • 1000:$0.1320
  • 3000:$0.1140
DMN1019USN-13
DISTI # 621-DMN1019USN-13		Diodes IncorporatedMOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
RoHS: Compliant		0
  • 10000:$0.1070
DMN1019USN-7
DISTI # 9211032P		Zetex / Diodes Inc9.3A 12V N-CH MOSFET TRANS SC-59, RL1550
  • 250:£0.1470
  • 1000:£0.1090
  • 2000:£0.1020
  • 3000:£0.0950
DMN1019USN-7
DISTI # 9211032		Zetex / Diodes Inc9.3A 12V N-CH MOSFET TRANS SC-59, PK700
  • 50:£0.2120
  • 250:£0.1470
  • 1000:£0.1090
  • 2000:£0.1020
  • 3000:£0.0950
DMN1019USN-7
DISTI # C1S205700491842		Diodes IncorporatedTrans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
RoHS: Compliant		936
  • 250:$0.1606
  • 100:$0.1622
  • 25:$0.3026
Bild Teil # Beschreibung
DMN1017UCP3-7

Mfr.#: DMN1017UCP3-7

OMO.#: OMO-DMN1017UCP3-7

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DMN1014UFDF-13

Mfr.#: DMN1014UFDF-13

OMO.#: OMO-DMN1014UFDF-13

 MOSFET MOSFET BVDSS: 8V-24V
DMN1014UFDF-7

Mfr.#: DMN1014UFDF-7

OMO.#: OMO-DMN1014UFDF-7

 MOSFET MOSFET BVDSS: 8V-24V
DMN1019USN-13

Mfr.#: DMN1019USN-13

OMO.#: OMO-DMN1019USN-13

 MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
DMN1019UVT-13

Mfr.#: DMN1019UVT-13

OMO.#: OMO-DMN1019UVT-13

 MOSFET 12V Enh Mode FET
DMN1016UCB6-7

Mfr.#: DMN1016UCB6-7

OMO.#: OMO-DMN1016UCB6-7

 MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
DMN1019USN

Mfr.#: DMN1019USN

OMO.#: OMO-DMN1019USN-1190

 Neu und Original
DMN1016UCB6-7

Mfr.#: DMN1016UCB6-7

OMO.#: OMO-DMN1016UCB6-7-DIODES

 MOSFET N-CH 12V 5.5A U-WLB1510-6
DMN1019UVT-13

Mfr.#: DMN1019UVT-13

OMO.#: OMO-DMN1019UVT-13-DIODES

 MOSFET 12V Enh Mode FET
DMN1019USN-13

Mfr.#: DMN1019USN-13

OMO.#: OMO-DMN1019USN-13-DIODES

 MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von DMN1019USN-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,12 $
0,12 $
10
0,11 $
1,10 $
100
0,10 $
10,38 $
500
0,10 $
49,00 $
1000
0,09 $
92,30 $
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