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HUF75639S3ST

HUF75639S3ST
Mfr. #:
HUF75639S3ST
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HUF75639S3ST Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
56 A
Rds On - Drain-Source-Widerstand:
25 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
200 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
UltraFET
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
HUF75639S3S
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
60 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
HUF75639S3ST_NL
Gewichtseinheit:
0.046296 oz
Tags
HUF75639S3ST, HUF75639S3S, HUF75639S3, HUF75639S, HUF75639, HUF7563, HUF756, HUF75, HUF7, HUF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***ure Electronics
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***ark
Transistor,mosfet,n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 100V 56A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***emi
N-Channel UltraFET® Power MOSFET 100V, 56A, 25mΩ
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area,resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
***ineon SCT
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK Tube
***roFlash
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET, N CH, 100V, 59A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:59A; Power Dissipation Pd:160W; Voltage Vgs Max:20V
***ical
Trans MOSFET N-CH 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK
*** Electronic Components
IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms
***roFlash
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
100V, N-Ch, 26 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ser
MOSFETs 44a, 100V, 0.030 Ohm N-Ch MOSFET
***i-Key
MOSFET N-CH 100V 44A D2PAK
***et
PWR MOS ULTRAFET 100V/41A/0.030 OHM N-CH TO-263AB T&REEL
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
HUF75639S3ST
DISTI # 27524398		ON SemiconductorFET 100V 25.0 MOHM D2PAK20800
  • 800:$1.1590
HUF75639S3ST
DISTI # 31291507		ON SemiconductorFET 100V 25.0 MOHM D2PAK2400
  • 800:$1.1712
HUF75639S3ST
DISTI # HUF75639S3STCT-ND		ON SemiconductorMOSFET N-CH 100V 56A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		326In Stock
  • 100:$1.9731
  • 10:$2.4550
  • 1:$2.7200
HUF75639S3ST
DISTI # HUF75639S3STDKR-ND		ON SemiconductorMOSFET N-CH 100V 56A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		326In Stock
  • 100:$1.9731
  • 10:$2.4550
  • 1:$2.7200
HUF75639S3ST
DISTI # HUF75639S3STTR-ND		ON SemiconductorMOSFET N-CH 100V 56A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$1.3452
HUF75639S3ST
DISTI # C1S541901472184		ON SemiconductorMOSFETs
RoHS: Compliant		2400
  • 2400:$0.7150
  • 1600:$0.7700
  • 800:$1.0000
HUF75639S3ST
DISTI # HUF75639S3ST		ON SemiconductorTrans MOSFET N-CH 100V 56A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HUF75639S3ST)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.8409
  • 1600:$0.8379
  • 3200:$0.8359
  • 4800:$0.8329
  • 8000:$0.8299
HUF75639S3ST
DISTI # 98B2178		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,56A I(D),TO-263AB ROHS COMPLIANT: YES0
  • 1:$1.1700
  • 800:$1.1600
  • 2400:$1.0600
  • 9600:$1.0300
HUF75639S3ST
DISTI # 512-HUF75639S3ST		ON SemiconductorMOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
RoHS: Compliant		1224
  • 1:$2.2800
  • 10:$1.9400
  • 100:$1.5500
  • 500:$1.3600
  • 800:$1.1300
HUF75639S3STFairchild Semiconductor CorporationPower Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		203573
  • 1000:$1.0800
  • 500:$1.1400
  • 100:$1.1800
  • 25:$1.2300
  • 1:$1.3300
HUF75639S3STNLFairchild Semiconductor Corporation 
RoHS: Not Compliant		88
  • 1000:$0.6700
  • 500:$0.7100
  • 100:$0.7400
  • 25:$0.7700
  • 1:$0.8300
HUF75639S3ST_QFairchild Semiconductor Corporation 
RoHS: Not Compliant		36800
  • 1000:$1.0700
  • 500:$1.1200
  • 100:$1.1700
  • 25:$1.2200
  • 1:$1.3100
HUF75639S3STFairchild Semiconductor Corporation 1600
    HUF75639S3ST
    DISTI # HUF75639S3ST    		ON SemiconductorTransistor: N-MOSFET,unipolar,100V,56A,200W,TO263AB723
    • 1:$1.1900
    • 3:$1.0800
    • 10:$0.8600
    • 100:$0.7500
    HUF75639S3STFairchild Semiconductor Corporation56A,100V,N-channel high power MOSFET4
    • 1:$1.8800
    • 100:$1.5100
    • 500:$1.2600
    • 1000:$1.1800
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von HUF75639S3ST dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,03 $
    2,03 $
    10
    1,72 $
    17,20 $
    100
    1,38 $
    138,00 $
    500
    1,20 $
    600,00 $
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